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  3 3v operation 4m-bit dram Datasheet PDF File

For 3 3v operation 4m-bit dram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    AMIC Technology Corporation
http://
AMIC Technology, Corp.
Part No. A29DL323TV-80 A29DL323UV-80 A29DL323TG-80 A29DL322UV-70 A29DL322UG-70 A29DL322TG-90 A29DL322TV-90 A29DL324TV-120 A29DL324TG-120 A29DL324UV-80 A29DL324UG-80 A29DL322TG-120 A29DL322TG-80 A29DL322UV-120 A29DL322TV-120 A29DL322TG-70 A29DL322UG-120 A29DL322TV-80 A29DL322TV-70 A29DL322UG-80 A29DL322UG-90 A29DL322UV-80 A29DL322UV-90 A29DL324TG-80 A29DL323TV-120 A29DL324TV-80 A29DL324TV-70 A29DL323UG-90 A29DL324UV-70 A29DL322V A29DL324TG-70
Description 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory 32兆位米8-Bit/2M x 16位).0伏的CMOS只,同时作业快闪记忆
32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory 32兆位4米8-Bit/2M x 16位).0伏的CMOS只,同时作业快闪记忆

File Size 778.64K  /  50 Page

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    AM29DL32XG AM29DL322GB120 AM29DL324GB70 ADVANCEDMICRODEVICESINC.-AM29DL322GT70

AMD
Part No. AM29DL32XG AM29DL322GB120 AM29DL324GB70 ADVANCEDMICRODEVICESINC.-AM29DL322GT70
Description 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only / Simultaneous operation Flash Memory
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory 32兆位4个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆

File Size 1,004.00K  /  58 Page

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    HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116400BTL-60 HYB3116400BTL-50 HYB3116400BT-70 HYB3116400BT-60 HYB3116400BT-50 HYB3116400BJ-70 HYB3116400BJ-60 HYB3116400BJ-50 HYB316400B HYB3117400BTL-70 HYB3117400BTL-60 HYB3117400BTL-50 HYB3116400BJBTL-50- HYB316400BTL-50 HYB3116400BJBTL-50
Description 4M x 4 Bit FPM dram 3.3 V 4k 50 ns
4M x 4 Bit FPM dram 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM

File Size 251.00K  /  26 Page

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    HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY57V161610DTC-6 HY57V161610DTC-10I HY57V161610DTC-6I HY57V161610DTC-55I HY57V161610DTC-7I
Description 2 Banks x 512K x 16 Bit Synchronous dram 1M X 16 SYNCHRONOUS dram, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous dram 1M X 16 SYNCHRONOUS dram, 5.5 ns, PDSO50
Sdram - 16Mb

File Size 171.73K  /  13 Page

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    EPC1064 EPC1 EPC1213 EPC1441 EPC1441XXX EPC1064PC8 EPC1064VPC8 EPC1213PC8 EPC1441PC8 EPC1064TC32 EPC1064VTC32 EPC1441TI3

Altera Corporation
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. EPC1064 EPC1 EPC1213 EPC1441 EPC1441XXX EPC1064PC8 EPC1064VPC8 EPC1213PC8 EPC1441PC8 EPC1064TC32 EPC1064VTC32 EPC1441TI32 EPC1441TC32
Description Configuration devices for SRAM-based LUT devices, 440,800 1-bit device with 5.0-V or 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 3.3-V operation
Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 5.0-V operation
Configuration devices for SRAM-based LUT devices, 212,942 1-bit device with 5.0-V operation

File Size 292.61K  /  36 Page

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    SIEMENS AG
Part No. TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC5116405BSJ-50 TC5116400BST-50 TC55B417P-10
Description 256K X 18 FAST PAGE dram, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER dram, 70 ns, PDSO26
16M X 1 EDO dram, 60 ns, PDSO24
4M X 4 OTHER dram, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24

File Size 58.19K  /  1 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. HYM72V4015GS-60 HYM72V4015GS-50 HYM72V4005GS-50 HYM72V4005GS-50- HYM72V4005GS-60
Description 4M x 72 Bit ECC dram Module buffered
4M x 72-Bit EDO-dram Module (ECC - Module)
4M x 72-Bit EDO-dram Module 4M X 72 EDO dram MODULE, 60 ns, DMA168

File Size 69.70K  /  11 Page

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    MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE11PBT MBM29PDS322TE10 MBM29PDS322TE10PBT

Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
Part No. MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE11PBT MBM29PDS322TE10 MBM29PDS322TE10PBT
Description 32M (2M x 16) BIT Page Dual operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual operation 32M的(2米16)位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85

File Size 238.87K  /  66 Page

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    Advanced Micro Devices, Inc.
Part No. AM41DL6408G25IS AM41DL6408G25IT AM41DL6408G45IS AM41DL6408G35IT AM41DL6408G30IT
Description 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4x 16位).0伏的CMOS只,同时作业闪存兆位 M中的x 8-Bit/512x 16位),静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4米x 16位).0伏的CMOS只,同时作业闪存兆位 M中的x 8-Bit/512亩x 16位),静态存储器

File Size 575.42K  /  63 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB3118160BSJ-60 Q67100-Q1073 HYB3118160BSJ-50 HYB5118160BSJ-50- Q67100-Q1072
Description 1M x 16 Bit 5 V 60 ns FPM dram
1M x 16 Bit 5 V 50 ns FPM dram
1M x 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)
1M*16-Bit Dynamic RAM 1k Refresh

File Size 190.00K  /  24 Page

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For 3 3v operation 4m-bit dram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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