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				Analog Devices
Part No.	AD8099
OCR Text	... 100k 1M 10M 100M 1G 0.1 1 10 100 1k 10k 100k 1M 10M 100M 1G (Hz) (Hz) Figure 7 . Input Current Noise vs. Frequency Disable Pin=+Vs 1000 Figure 10. Voltage Noise vs. Frequency 5 C...
Description	Unprecedented Low Noise and Low Distortion High Speed Op-Amp
File Size	308.09K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HD74LVCZ16240A
OCR Text	...nd has four active low enables (1G to 4G). Each enable independently controls four buffers. When VCC is between 0 and 1.5 V, the device is in the high impedance state during power up or power down. Low voltage and high speed operation is su...
Description	16-bit Buffers / Line Drivers with 3-state Outputs
File Size	53.16K / 11 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HD74LVCZ16244A
OCR Text	...nd has four active low enables (1G to 4G). Each enable independently controls four buffers. When VCC is between 0 and 1.5 V, the device is in the high impedance state during power up or power down. Low voltage and high speed operation is su...
Description	16-bit Buffers / Line Drivers with 3-state Outputs
File Size	52.13K / 11 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HD74LVCZ16245A
OCR Text	... 21 2B7 22 2B8 23 2DIR 24 48 1G 47 1A1 46 1A2 45 GND 44 1A3 43 1A4 42 VCC 41 1A5 40 1A6 39 GND 38 1A7 37 1A8 36 2A1 35 2A2 34 GND 33 2A3 32 2A4 31 VCC 30 2A5 29 2A6 28 GND 27 2A7 26 2A8 25 2G (Top view) 3 HD74LVCZ16245A Absolut...
Description	16-bit Bidirectional Transceivers with 3-state Outputs
File Size	55.00K / 12 Page	View it Online	Download Datasheet

				Sharp Electrionic Components
Part No.	LR38666Y
OCR Text	...F 3F 5F 5G 4G 1F 2G 3G 6G 5H 4H 1G 3H 2H 6H 1H 5J 4J 2J 3J 6J 1J 6K 4K 2K 3K MEMCKE2 MEMCKE3 MEMCS0Z MEMCS1Z MEMCS2Z DVDD MEMCS3Z DGND MEMD0...bit data mode : SDRAM chip select, Block 2 32-bit data mode : Control MEMD15 to MEMD8 of SDRAM Power...
Description	CMOS digital signal processor
File Size	197.84K / 38 Page	View it Online	Download Datasheet

				Toshiba.
Part No.	TC58NVG0S3AFT00
OCR Text	...e TC58NVG0S3A is a single 3.3-V 1g-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The device has a 2112-byte static registers which ...
Description
File Size	360.16K / 32 Page	View it Online	Download Datasheet

				Toshiba. Toshiba Semiconductor
Part No.	TC58NVG0S3AFT05
OCR Text	...e TC58NVG0S3A is a single 3.3-V 1g-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes x 64 pages x 1024 blocks. The device has a 2112-byte static registers whic...
Description	1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
File Size	549.33K / 33 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7R320982M K7R321882 K7R321882M K7R323682 K7R323682M DS_K7R323682M DSK7R323682M K7R321884M K7R323684M
OCR Text	...C,2D,3F,2G,3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N ...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ...
Description	1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
File Size	202.01K / 19 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HN29V2G74W30
OCR Text	...AND flash memory. It mounts two 1g-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times fas...
Description	Flash Memory - Datasheet Reference
File Size	1,574.83K / 93 Page	View it Online	Download Datasheet

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