1a-5v pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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1a-5v Datasheet PDF File

For 1a-5v Found Datasheets File :: 40307 Search Time::2.203ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB13007DT4 B13007D
OCR Text	... _ IB = 0.4A IC = 5 A __ _ IB = 1A IC = 8 A IC = 5 A __ _ IB = 2A __ _ IB = 1A IC = 2A 400 0.8 1.5 2 3 V V V V V VCE(sat) (1) Co...5V L = 200H (see fig. 11) 2.2 150 s ns VBE(off) = -5V L = 200H 1.7 90 2.3 150 s ns _ _VCE = 5V _VCE ...
Description	High voltage fast-switching NPN power transistor
File Size	210.56K / 10 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	TSM4539D
OCR Text	...e n-channel v ds =10v, i d =1a, v gs =10v q g n-ch -- 7 -- nc p-ch -- 9.7 -- gate-source charge q gs n-ch -- 1.6 -- p-channel v ds =-15v, i d =-5.2a, v gs =-10v p-ch -- 1.6 -- gate-drain charge q...
Description	Complementary Enhancement MOSFET
File Size	60.62K / 4 Page	View it Online	Download Datasheet

				Advanced Analogic Technologies
Part No.	AAT1162 AAT1162IRN-0.6-T1
OCR Text	...s shutdown current to less than 1A. The AAT1162 is available in a Pb-free, space-saving, thermally-enhanced 16-pin TDFN34 packageand is rate...5V to 13.2V VIN = 12V, VOUT = 5V, IOUT = 0A to 1.5A No Load, TA = 25C VOUT = 1.2V Adjustable Version...
Description	12V, 1.5A Step-Down DC/DC Converter
File Size	591.53K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMN80XP
OCR Text	...source current t amb =25c [1] --1a pmn80xp all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all...5v; i d =-2.5a; t j = 25 c - 80 102 m ? v gs =-4.5v; i d =-2.5a; t j = 150 c - 116 148 m ? v gs =-2....
Description	20 V, single P-channel Trench MOSFET
File Size	919.69K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMN48XP
OCR Text	... gs =-4.5v; t amb =25c [1] ---4.1a static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d =-2.4a; t j = 25 c - 48 55 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 d dra...
Description	20 V, 4.1 A P-channel Trench MOSFET
File Size	513.22K / 15 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4922
OCR Text	...ansconductance VDS=5V, ID=9A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9A TJ=125C 1....
Description	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	155.61K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMN34UP
OCR Text	... gs =-4.5v; t amb =100c [1] --3.1a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -20 a p tot total power dissipation t amb =25c [2] - 540 mw [1] - 1385 mw t sp = 25 c - 6250 mw t j junction temperature -55 150 c t amb ambi...
Description	20 V, 5 A P-channel Trench MOSFET
File Size	803.94K / 15 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4932
OCR Text	...ansconductance VDS=5V, ID=9A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9A TJ=125C 1....
Description	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	144.14K / 8 Page	View it Online	Download Datasheet

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