1930-1990 pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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1930-1990 Datasheet PDF File

For 1930-1990 Found Datasheets File :: 755 Search Time::3.86ms
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				TAI-SAW TECHNOLOGY CO., LTD.
Part No.	TA0207A
OCR Text	...1960 - insertion loss within 1930 ~1990 mhz il (db) - 2.7 3.3 a mplitude ripple (p-p) within 1930 ~ 1990 mhz (db) - 1.2 2.0 a ttenuation (reference level from 0 db) d.c. ~ 1850 mhz ...
Description	SAW Filter 1960MHz SMD 2.5X2.0 mm
File Size	529.28K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10154
OCR Text	... - WAVE LEN GTH Z Source 1930 MHz 1990 MHz 0.0 TOW AR D LOAD G TH S G S 1930 MHz 1990 MHz Z Load Frequency GHz 1930 1960 1990 R Z Source W jX 3.0 2.6 1.2 R 1.4 1.4 1.4 2.9 2.5 2.1 Z Load W jX -0.2 -0.9 -1.5 0...
Description	85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
File Size	255.49K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA192401F
OCR Text	...cdma and cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excell...
Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
File Size	422.56K / 11 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	PA1166
OCR Text	1930-1990 MHz. 28v. GaAs Ultra Linear Power Features (typical values) High IP3 ............................................. +53.0 dBm. Low NF ....................................................... 3.0 dB. High Output Power .............
Description	28v. GaAs Ultra Linear Power
File Size	58.07K / 2 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39202B3513U510
OCR Text	...mum insertion attenuation a max 1930.00 ... 1990.00 mhz 3.5 4.2 db amplitude ripple (p-p) 1930.00 ... 1990.00 mhz 1.8 2.7 db vswr 1930.00 ... 1990.00 mhz 2.0 2.5 attenuation a 10.00 ... 1650.00 mhz 40 50 db 1650.00 ... 1850.00 mhz 30 35...
Description	SAW Components
File Size	63.78K / 6 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39202B3515H910
OCR Text	...mum insertion attenuation a max 1930.0 ... 1990.0 mhz 2.6 3.1 db amplitude ripple 1930.0 ... 1990.0 mhz 1.0 1.5 db vswr 1930.0 ... 1990.0 mhz 2.2 2.4 output amplitude balance (\| s 31 / s 21 \|) 1930.0 ... 1990.0 mhz C1.5 1.5 db output pha...
Description	SAW Components
File Size	98.48K / 9 Page	View it Online	Download Datasheet

				Cree Research
Part No.	PFM19030
OCR Text	1930-1990 MHz, 30W, 2-Stage Power Module aS Enhancement-Mode Lateral MOSFETs at .D This versatile PCS module provides excellent linearity and efficiency in a w The wlow-cost surface mount package. sensePFM19030 includes two stages of amplif...
Description	2-Stage Power Module Enhancement-Mode Lateral MOSFETs
File Size	350.12K / 15 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	PFM19030 PFM19030SM PFM19030F
OCR Text	1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile PCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM19030 includes two stages of Package Type: Surface ...
Description	1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
File Size	320.08K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA191001E PTFA191001F
OCR Text	...wo-carrier wcdma operation from 1930 to 1990 mhz. thermally-enhanced packaging provides the coolest operation available. ptfa191001e package h-36248-2 thermally-enhanced high power rf ldmos fets 100 w, 1930 ? 1990 mhz ptfa191001f package h-...
Description	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
File Size	248.28K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S19260HR6 MRF8S19260HSR6
OCR Text	...lications with frequencies from 1930 to 1990 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =30volts,i dq = 1600 ma, p out = 74 watts av...
Description	RF Power Field Effect Transistors
File Size	502.42K / 14 Page	View it Online	Download Datasheet

For 1930-1990 Found Datasheets File :: 755 Search Time::3.86ms
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