...
3.10.1
1.40.1
1.30.2
14.00.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.5 +0.2 -0.1 0.80.1
2.540.25 5.080.5
...
Description
Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
...ature Storage temperature
V
14.70.5 4.40.5 0 to 0.4
V A A W
10.00.3
1.5-0.4
4.40.5
2.0
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
5.080.5
C C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical C...
...12 -7 30 2 150 -55 to +150
4.0 14.00.5 Solder Dip
Ratings
Unit V
emitter voltage 2SB953A Emitter to base voltage Peak collector cu...3
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package whi...
...Unit V 2SB954 2SB954A 2SB954
14.00.5
base voltage Collector to
emitter voltage 2SB954A Emitter to base voltage Peak collector curre...3
7.50.2
High forward current transfer ratio hFE which has satisfactory linearity Low collecto...
Description
Silicon PNP epitaxial planar type(For power amplification)
... 800MHz 11 15 10 50 5 150 6 0.7 14 15 1.3
*
min
typ
max 1 1
0.15-0.05
+0.1
0.3-0
+0.1
Unit A A V V
200 GHz 1.2 pF dB dB 2 dB
Pulse measurement
1
Transistor
PC -- Ta
240 24 Ta=25C 200 20 IB=200A 100
...
Description
Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
...e|2 - Insertion Power Gain - dB 14
INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 5 V f = 1 GHz
IB = 120 m A
IC - Collector Current...3
2SC5004
MAXIMUM AVAILABLE GAIN MAXIMUM AVAILABLE GAIN, INSERTION INSERTION POWER GAIN vs. FR...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor
...COLLECTOR TO EMITTER VOLTAGE 30 14
INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 5 V f = 1 GHz
IB = 160 m A
20
140 m A 120 m A 10...3
2SC5005
MAXIMUM AVAILABLE GAIN INSERTION POWER GAIN vs. FREQUENCY 20 VCE = 5 V 2.0 f = 1 MHz F...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Discrete
...OWER GAIN vs. COLLECTOR CURRENT 14 VCE = 3 V f = 1 GHZ
10
fT - Gain Bandwidth Product - GHz
|S21e|2 - Insertion Power Gain - dB
VCE = 3 V f = 1 GHZ 8
12 10 8 6 4 2 0
6
4
2
0 0.5
1
2
5
10
20
50
...
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模 NPN epitaxial-type silicon transistor