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  -900v Datasheet PDF File

For -900v Found Datasheets File :: 1633    Search Time::1.157ms    
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    APTGT75DA170T1G

Microsemi Corporation
Part No. APTGT75DA170T1G
OCR Text ...witching (25C) VGE = 15V VBus = 900V IC = 75A RG = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 75A RG = 6.8 VGE = 15V Tj = 125C VBus = 900V IC = 75A Tj = 125C RG = 6.8 Min Typ 6800 277 220 370 40 650 180 400 50 800 300 24 mJ 23...
Description Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module

File Size 277.31K  /  5 Page

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    APTC90HM60T3G

Microsemi Corporation
Part No. APTC90HM60T3G
OCR Text 900V RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies 18 22 19 Q2 23 8 Q4 7 11 10 Features * - Ultra low RDSon - Low Miller capacita...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 188.68K  /  5 Page

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    2MBI200U4H-170

Fuji Electric
Part No. 2MBI200U4H-170
OCR Text ...25C VCE=10V,VGE=0V,f=1MHz Vcc = 900V Ic = 200A VGE=15V Rg = 2.2 VGE=15V Tj= 25C Tj=125C Tj= 25C Tj=125C Characteristics min. typ. max. 4.5 6.5 2.40 2.80 2.25 2.65 19 0.62 0.39 0.05 0.55 0.09 1.95 2.15 1.80 2.00 0.53 2.0 400 8.5 2.55 2....
Description IGBT MODULE

File Size 431.13K  /  13 Page

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    2MBI150U4H-170

Fuji Electric
Part No. 2MBI150U4H-170
OCR Text ...10V,VGE=0V,f=1MHz VGE=15V Vcc = 900V Ic = 150A VGE=15V Rg = 3.3 Tj= 25C Tj=125C Tj= 25C Tj=125C Characteristics min. typ. max. 4.5 a a Units mA nA V 6.5 2.40 2.80 2.25 2.65 14 0.62 0.39 0.05 0.55 0.09 1.90 2.10 1.80 2.00 0.53 a...
Description IGBT MODULE

File Size 435.81K  /  13 Page

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    2MBI100U4H-170

Fuji Electric
Part No. 2MBI100U4H-170
OCR Text ...25C VCE=10V,VGE=0V,f=1MHz Vcc = 900V Ic = 100A VGE=15V Rg = 4.7 VGE=15V Tj= 25C Tj=125C Tj= 25C Tj=125C Characteristics min. typ. max. 4.5 a a Units mA nA V 6.5 2.35 2.75 2.25 2.65 9 0.62 0.39 0.05 0.55 0.09 1.85 2.05 1.80 2.00 ...
Description IGBT MODULE

File Size 434.05K  /  13 Page

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    APTC90A12T1G

Microsemi Corporation
Part No. APTC90A12T1G
OCR Text 900V RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate ch...
Description Phase leg Super Junction MOSFET Power Module

File Size 200.21K  /  5 Page

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    APT27GA90BD15 APT27GA90SD15

Microsemi Corporation
Part No. APT27GA90BD15 APT27GA90SD15
OCR Text 900V High Speed PT IGBT (R) TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in s...
Description High Speed PT IGBT

File Size 252.15K  /  9 Page

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    APT27GA90K

Microsemi Corporation
Part No. APT27GA90K
OCR Text 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficien...
Description High Speed PT IGBT

File Size 214.34K  /  6 Page

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    APT35GA90BD15 APT35GA90SD15

Microsemi Corporation
Part No. APT35GA90BD15 APT35GA90SD15
OCR Text 900V High Speed PT IGBT (R) TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in s...
Description High Speed PT IGBT

File Size 240.00K  /  9 Page

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    APT35GA90B APT35GA90S

Microsemi Corporation
Part No. APT35GA90B APT35GA90S
OCR Text 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior...
Description High Speed PT IGBT

File Size 207.99K  /  6 Page

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For -900v Found Datasheets File :: 1633    Search Time::1.157ms    
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