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  -160v Datasheet PDF File

For -160v Found Datasheets File :: 2819    Search Time::4.5ms    
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    IRFS17N20D IRFB17N20D

IRF
International Rectifier, Corp.
Part No. IRFS17N20D IRFB17N20D
OCR Text ...ce charge CCC 8.4 13 nc v ds = 160v q gd gate-to-drain ("miller") charge CCC 16 24 v gs = 10v, ?? t d(on) turn-on delay time CCC 11 CCC v dd = 100v t r rise time CCC 19 CCC i d = 9.8a t d(off) turn-off delay time CCC 18 CCC r g = 5.1...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.17ohm/ Id=16A)
Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.17ohm,身份证\u003d 16A条)

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    IRHM7250 IRHM7250-15

International Rectifier
Part No. IRHM7250 IRHM7250-15
OCR Text ...ge drain current ? ? 25 v ds = 160v,v gs = 0v ? ? 250 v ds = 160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 170 v...
Description Simple Drive Requirements

File Size 327.21K  /  12 Page

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    SH101M016ST SH221M016ST SH331M016ST SH471M016ST SH470M025ST SH2R2M100ST SH2R2M200ST SH010M100ST SH101M025ST SH221M025ST

Cornell Dubilier Electr...
Cornell Dubilier Electronics
Part No. SH101M016ST SH221M016ST SH331M016ST SH471M016ST SH470M025ST SH2R2M100ST SH2R2M200ST SH010M100ST SH101M025ST SH221M025ST SH331M025ST SH471M025ST SH101M250ST SHR47M100ST SH222M010ST SH222M016ST SH222M025ST SH222M035ST SH222M050ST SHR47M050ST SH010M250ST SH470M010ST SH221M010ST SH221M035ST SH220M400ST SH220M200ST SH220M250ST SH221M050ST SH101M050ST SH331M050ST SH471M050ST SH4R7M100ST SH470M160ST SH100M063ST SH100M050ST SH100M025ST SH100M035ST SH100M100ST SH4R7M250ST SH471M100ST SH3R3M250ST SH330M160ST SH220M025ST SH220M050ST SH220M160ST SH220M035ST SH220M063ST SH221M100ST SH220M100ST SH472M025ST SH010M050ST SH010M160ST SH010M200ST SH332M025ST SH100M450ST SH470M100ST SH101M010ST SH101M160ST SH101M035ST SH101M063ST SH101M100ST SH470M250ST SH332M035ST SH100M160ST SH221M063ST SH330M100ST SH470M016ST
OCR Text ...20 47 F 100V 10 % DF %C 0 100 F 160V -10 -20 -30 -40 0 40 80 Temperature gC 120 1 -40 0 40 80 Temperature gC 120 10 5 100 F 160V 47 F 100V 100 50 Capacitance Change Ratio Dissipation Factor Change Load Life Characteristics 100 1...
Description 105 ?CRadial Leaded Aluminum Electorlytic Capacitors
105 垄陋CRadial Leaded Aluminum Electorlytic Capacitors
105 ?CRadial Leaded Aluminum Electorlytic Capacitors
105 ?CRadial Leaded Aluminum Electorlytic Capacitors

File Size 293.84K  /  5 Page

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    IR2131

IRF[International Rectifier]
Part No. IR2131
OCR Text ... 40 320V 40 320V 35 160V 35 160V 30 0V 30 0V 25 25 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 Figure 7. IR2131 TJ vs. Frequency (IRF820) RGATE = 3...
Description 3 HIGH SIDE AND 3 LOW SIDE DRIVER

File Size 248.96K  /  8 Page

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    IRFP260 IRFP260N IRFP260NPBF

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP260 IRFP260N IRFP260NPBF
OCR Text ...DS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 234 ID = 28A 38 nC VDS = 160V 110 VGS = 10V --- VDD = 100V --- ID = 28A ns --- RG = 1.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from p...
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.04ohm,身份证\u003d 50A条)

File Size 120.41K  /  8 Page

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    IRF630NL IRF630NPBF IRF630NS IRF630NLPBF IRF630NSPBF IRF630NSTRL IRF630NSTRR

International Rectifier
Part No. IRF630NL IRF630NPBF IRF630NS IRF630NLPBF IRF630NSPBF IRF630NSTRL IRF630NSTRR
OCR Text ... v gs = 0v CCC CCC 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 35 i d = 5.4a q gs gate-to-sourc...
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 163.24K  /  11 Page

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    IRH7250 IRH8250

International Rectifier
Part No. IRH7250 IRH8250
OCR Text ...age drain current ? ? 25 v ds = 160v ,v gs =0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 170 v...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package

File Size 258.58K  /  12 Page

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    IRH9250 IRH93250

International Rectifier
Part No. IRH9250 IRH93250
OCR Text ...e drain current ? ? -25 v ds = -160v ,v gs =0v ? ? -250 v ds = -160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 2...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package

File Size 111.10K  /  8 Page

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    IRF5801

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5801
OCR Text ...DS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transcon...
Description Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)最大值\u003d 2.2ohm,身份证\u003d 0.6A的)
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

File Size 119.47K  /  8 Page

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    IRFB42N20DPBF

International Rectifier
Part No. IRFB42N20DPBF
OCR Text ...rce charge ??? 24 36 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 43 65 v gs = 10v, t d(on) turn-on delay time ??? 18 ??? v dd = 100v t r rise time ??? 69 ??? i d = 26a t d(off) turn-off delay time ??? 29 ??? r g = 1.8 ? t f...
Description HEXFET Power MOSFET

File Size 166.52K  /  8 Page

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