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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM100HA-H QM100HY-H
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Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER switching USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250v
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File Size |
84.94K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
2SC3625 2SC3560 2SC3561 2SD1410 2SC3559
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Description |
8a; 40W; V(ceo): 400V; NPN transistor. For switching regulation 2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation 6A; 25W; V(ceo): 250v; NPN darlington transistor 3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation
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File Size |
100.19K /
1 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
FQI9N25 FQB9N25 FQB9N25TM
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Description |
250v N-Channel QFET 250v N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 9.4 A, 250 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
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File Size |
684.21K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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