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Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Panasonic, Corp.
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| Part No. |
AQW454 AQW454AZ AQW454A AQW454AX
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| Description |
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 5/6/7/8-pin side.
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 1/2/3/4-pin side.
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal.
HE (high-function Economy) Type [2-Channel (Form B) Type] 他（高功能经济）类型[2通道（表B）型]
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| File Size |
43.48K /
3 Page |
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it Online |
Download Datasheet
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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