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ruggedness. Datasheet PDF File

For ruggedness. Found Datasheets File :: 7228 Search Time::1.047ms
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				RFMD[RF Micro Devices]
Part No.	RF3146 RF3146PCBA RF3146SB
OCR Text	...5 -36 50 Output Load VSWR Ruggedness 10:1 Output Load Impedance 50 dB Power Control VRAMP Power Control Range 55 Notes: VRAMP MAX =0.4*VBATT +0.06<1.5V VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions. Rev A7 ...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
File Size	314.54K / 18 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-025
OCR Text	...nductor Company! * Excellent Ruggedness * Excellent Ruggedness * 48V Supply Voltage Supply The high48VSupply Voltage power HVV1214-075 High Power Gain Voltage device is a high 48V *voltage silicon enhancement mode RF transistor High P...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
File Size	642.96K / 2 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF31451
OCR Text	...WR Output Load VSWR Output Load Ruggedness Output Load Impedance Note: VRAMP,MAX =3/8*VBATT +0.18<1.6V -86 -84 -25 -5 dBm dBm dBm dBm dBm dBm -30 -7 -36 -20 50 2.5:1 6:1 10:1 50 2 of 18 7628 Thorndike Road, Greensbo...
Description	QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
File Size	310.65K / 18 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF5146PCBA-41X
OCR Text	...Width=1154s Output Load VSWR Ruggedness 10:1 Output Load Impedance Power Control VRAMP Power Control Range Notes: VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions. Rev A1 DS050928 7628 Thorndike Road, Greensboro, NC ...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
File Size	624.48K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUND HMK432B7225KM--T MCGPR100V477M16X32--RH ATC100B102KT50XT ATC100B150JT500XT C4532X7R1H685K ATC100B471JT200XT
OCR Text	...rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets these high ruggedness devices are designed for use in high vswr industrial (including laser and plasma exciters), broadcast (analog and digital), aerosp...
Description	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
File Size	855.06K / 23 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...yp Efficiency -- 55% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 7.0 pF Typ @ VDS = 50 V MRF176GU MRF176GV 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs D G G S (...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	...yp Efficiency -- 55% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 20 pF Typ @ VDS = 28 V G G S (FLANGE) MRF175GU MRF175GV 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	...yp Efficiency -- 55% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 20 pF Typ @ VDS = 28 V G G S (FLANGE) MRF175GU MRF175GV 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	...yp Efficiency -- 65% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 20 pF Typ @ VDS = 28 V G S MRF175LU MRF175LV 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs D CASE 333-04, S...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	...yp Efficiency -- 65% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 20 pF Typ @ VDS = 28 V G S MRF175LU MRF175LV 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs D CASE 333-04, S...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

For ruggedness. Found Datasheets File :: 7228 Search Time::1.047ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |