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Renesas Electronics Corporation |
Part No. |
RJP65S08DWA-00#W0
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Description |
IGBT 650V 200A Wafer
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Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
Part No. |
RJP65S08DWT-80#X0
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Description |
IGBT 650V 200A Chip
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Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
Part No. |
RJP65S08DWT-00#X0
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Description |
IGBT 650V 200A Chip
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Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
Part No. |
RJP1CS08DWT-80#X0
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Description |
IGBT 1250V 200A Chip
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Tech specs |
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Official Product Page
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![BY239-200A BY239-800A BY239-400A BY239-600A](Maker_logo/stmicroelectronics.GIF)
ST Microelectronics STMICROELECTRONICS
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Part No. |
BY239-200A BY239-800A BY239-400A BY239-600A
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Description |
10 A, 200 V, SILICON, RECTIFIER DIODE 10 A, 800 V, SILICON, RECTIFIER DIODE 10 A, 400 V, SILICON, RECTIFIER DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE
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File Size |
28.06K /
2 Page |
View
it Online |
Download Datasheet
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Renesas Electronics Corporation |
Part No. |
RJP1CS08DWS-80#W0
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Description |
IGBT 1250V 200A Sawn
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Tech specs |
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Official Product Page
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![](images/bg04.gif) |
Renesas Electronics Corporation |
Part No. |
RJP65S08DWA-80#W0
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Description |
IGBT 650V 200A Wafer
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Tech specs |
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Official Product Page
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
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Description |
PowerMOS transistor 功率金属氧化物半导体晶体 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk PowerMOS transistor
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File Size |
76.65K /
7 Page |
View
it Online |
Download Datasheet
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![](images/bg04.gif) |
Renesas Electronics Corporation |
Part No. |
RJP1CS08DWA-80#W0
|
Description |
IGBT 1250V 200A Wafer
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Tech specs |
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Official Product Page
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![](images/bg04.gif) |
Renesas Electronics Corporation |
Part No. |
RJP65S08DWS-80#W0
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Description |
IGBT 650V 200A Sawn
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Tech specs |
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Official Product Page
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Bom2Buy.com
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Price and Availability
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