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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S20010GNR1
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| OCR Text |
...q = 130 ma, p out = 10 watts pep power gain ? 15.5 db drain efficiency ? 36% imd ? - 34 dbc ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 130 ma, p out = 1 watt avg., full frequency band (2130 - 2170 mhz), ch... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
584.19K /
24 Page |
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it Online |
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Freescale (Motorola)
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| Part No. |
MRF21120R6
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| OCR Text |
...(v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10.5 11.4 ? db drain efficiency (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) 30 34.5 ? % inte... |
| Description |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET
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| File Size |
521.37K /
8 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9125NR1
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| OCR Text |
...ma p out , output power (watts) pep 20 18 10 g ps , power gain (db) 21 19 1187 ma 950 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements, 100 mhz tone spacing figure 6. third order intermodulation distortion versus... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
471.78K /
16 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MW5IC2030NBR1065
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| OCR Text |
...ma p out , output power (watts) pep figure 7. two - tone power gain versus output power g ps , power gain (db) v dd = 27 vdc f1 = 1960 mhz, f2 = 1960.1 mhz two?tone measurements i dq1 = 160 ma i dq2 = 230 ma i dq1 = 120 ma i dq2 = 175... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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| File Size |
663.32K /
20 Page |
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it Online |
Download Datasheet |
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