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  n-mosfet Datasheet PDF File

For n-mosfet Found Datasheets File :: 38985    Search Time::1.609ms    
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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ...he integral reverse G S D p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A, VDD = 10V di/dt = 100A/s e e 2 ...MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has been given to ...
Description HEXFETPower MOSFET

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ... showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF3805/S/L...
Description AUTOMOTIVE MOSFET

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...ntegral reverse --- --- 550 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VGS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) U Coss ef...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...ntegral reverse --- --- 550 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VGS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repetit...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...integral reverse --- --- -260 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, VGS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...integral reverse --- --- -260 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, V GS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -16A, VGS = 0V --- 71 110 ns TJ = 25C, IF = -16A --- 170 250 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...tor Corporation IRF530A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drai...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...integral reverse --- --- 60 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 9.0A, VGS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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SCT2H12NZGC11
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ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC 450: USD3.75
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123

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