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				IDT[Integrated Device Technology]
Part No.	IDT71V2556S IDT71V2556S100BGI IDT71V2556S100BQI IDT71V2556S100PF IDT71V2556S133BG IDT71V2556S133BQ IDT71V2556S133PF IDT71V2556S133PFI IDT71V2556S166BG IDT71V2556S200BG IDT71V2556S200BGI IDT71V2556S200BQ IDT71V2556S200PF IDT71V2556SA IDT71V2556SA100BQ IDT71V2558SA200PFI IDT71V2556S100BG IDT71V2556S100BQ IDT71V2556S100PFI IDT71V2556S133BGI IDT71V2556S133BQI IDT71V2556S166BGI IDT71V2556S166BQ IDT71V2556S166BQI IDT71V2556S166PF IDT71V2556S166PFI IDT71V2556S200BQI IDT71V2556S200PFI IDT71V2556SA100BG IDT71V2556SA100BGI IDT71V2556SA100BQI IDT71V2556SA100PF IDT71V2556SA100PFI IDT71V2556SA133BG IDT71V2556SA133BGI IDT71V2556SA133BQ IDT71V2556SA133BQI IDT71V2556SA133PF IDT71V2556SA133PFI IDT71V2556SA166BG IDT71V2556SA166BGI IDT71V2556SA166BQ IDT71V2556SA166BQI IDT71V2556SA166PF IDT71V2556SA166PFI IDT71V2556SA200BG IDT71V2556SA200BGI IDT71V2556SA200BQ IDT71V2556SA200BQI IDT71V2556SA200PF IDT71V2556SA200PFI IDT71V2558S IDT71V2558S100BG IDT71V2558S100BGI IDT71V2558S100BQ IDT71V2558S100BQI IDT71V2558S100PF IDT71V2558S100PFI IDT71V2558S133BG IDT71V2558S133BGI IDT71V2558S133BQ IDT71V2558S133BQI IDT71V2558S133PF IDT71V2558S133PFI IDT71V2558S166BG IDT71V2558S166BGI IDT71V2558S166BQ IDT71V2558S166BQI
OCR Text	... clock cycle, and two cycles later the associated data cycle occurs, be it read or write. The IDT71V2556/58 contain data I/O, address and control signal registers. Output enable is the only asynchronous signal and can be used to disable ...
Description	128K X 36, 256K X 18 3.3V SYNCHRONOUS ZBT SRAMS 2.5V I/O, BURST COUNTER PIPELINED OUTPUTS
File Size	996.65K / 28 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMD1M32M2GL-5 HMD1M32M2GL-6 HMD1M32M2GL
OCR Text	.... 12. tCP is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle. 13. tCWD is referenced to the later /CAS falling edge at word read-modify-write cycle. 14. tCWL is specified fr...
Description	4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
File Size	227.16K / 7 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMD1M4Z1-5 HMD1M4Z1-6 HMD1M4Z1
OCR Text	.... 12. tCP is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle. 13. tCWD is referenced to the later /CAS falling edge at word read-modify-write cycle. 14. tCWL is specified fr...
Description	4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
File Size	214.49K / 6 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMD2564Z1-5 HMD2564Z1-6 HMD2564Z1
OCR Text	.... 12. tCP is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle. 13. tCWD is referenced to the later /CAS falling edge at word read-modify-write cycle. 14. tCWL is specified fr...
Description	1Mbit(256x4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
File Size	215.31K / 6 Page	View it Online	Download Datasheet

				Integrated Device Technology
Part No.	71V3558S200PFG
OCR Text	...one clock cycle, and two cycles later the associated data cycle occurs, be it read or write. the idt71v3556/58 contain data i/o, address and control signal registers. output enable is the only asynchronous signal and can be used to disable ...
Description	128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs
File Size	644.98K / 28 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMD4M1Z1-5 HMD4M1Z1-6 HMD4M1Z1
OCR Text	.... 12. tCP is specified from the later /CAS rising edge in the previous cycle to the earlier /CAS falling edge in the next cycle. 13. tCWD is referenced to the later /CAS falling edge at word read-modify-write cycle. 14. tCWL is specified fr...
Description	4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
File Size	213.57K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM6216255H HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 HM6216255HLTT-10 HM6216255HLTT-12 HM6216255HLTT-15 HM6216255HTT-10 HM6216255HTT-12 HM6216255HTT-15
OCR Text	...B. 8. t CW is measured from the later of CS going low to the end of write. 9. t LBW is measured from the later of LB going low to the end of write. 10. t UBW is measured from the later of UB going low to the end of write. 8 HM6216255H...
Description	4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位） 4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
File Size	95.55K / 17 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM6216255HI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15
OCR Text	...B. 8. t CW is measured from the later of CS going low to the end of write. 9. t LBW is measured from the later of LB going low to the end of write. 10. t UBW is measured from the later of UB going low to the end of write. 7 HM6216255H...
Description	4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位） 4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
File Size	88.43K / 16 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM6216255HC HM6216255HCJP-10 HM6216255HCLJP-10 HM6216255HCLTT-10 HM6216255HCTT-10
OCR Text	...B. 8. t CW is measured from the later of CS going low to the end of write. 9. t LBW is measured from the later of LB going low to the end of write. 10. t UBW is measured from the later of UB going low to the end of write. 8 HM6216255H...
Description	4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
File Size	91.99K / 17 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] http://
Part No.	DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-15 1220Y DS1220AB-100-IND DS1220AB-120-IND DS1220AB-150-IND DS1220AD-100-IND DS1220AD-120-IND DS1220AD-150-IND DS1220AD-200-IND
OCR Text	...ccess must be measured from the later-occurring signal and the limiting parameter is either tCO for CE or tOE for OE rather than address access. WRITE MODE The DS1220Y executes a write cycle whenever the WE and CE signals are active (lo...
Description	2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16K Nonovolatile SRAM From old datasheet system
File Size	143.29K / 8 Page	View it Online	Download Datasheet

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