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For high-hfe Found Datasheets File :: 18984 Search Time::3.203ms
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				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	2SA2097
OCR Text	High-Speed Swtching Applications DC-DC Converter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) Unit: mm Maximu...
Description	High-Speed Swtching Applications DC-DC Converter Applications
File Size	119.11K / 5 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SA2113
OCR Text	High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Strong ...hFE VCE= -2V, IC= -100mA 120 - 390 - DC current gain fT - 350 - MHz VCE= -10V, IE=100mA, f=10MHz Tra...
Description	Medium power transistor ( 30V/2A) Medium power transistor (−30V, −2A) Medium power transistor (-30V, -2A)
File Size	42.97K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SA608 2SA608N 2SC536N
OCR Text	...ng used in the low frequency to high frequency range. Package Dimensions unit:mm 2164 [2SA608N/2SC536N] 4.5 3.7 Features * Large c...hFE as follow Rank hFE F 160 to 320 G 280 to 560 Any and all SANYO products described or contain...
Description	Low-Frequency General-Purpose Amplifier Applications PNP/NPN Epitaxial Planar Silicon Transistors PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
File Size	39.56K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4853A
OCR Text	... * Low-Voltage, Low-Current High-Frequency Amplifier Applications Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) ...hFE VCB=5V, IE=0A VEB=1V, IC=0A VCE=1V, IC=1mA 60* Conditions Ratings min typ max 1.0 10 270* Unit A...
Description	Low-Voltage, Low-Current High-Frequency Amplifier Applications
File Size	51.89K / 5 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SC6012
OCR Text	....5) 3.00.3 5 Features * High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switc...hFE VCE(sat) VBE(sat) fT tstg tf IF = 7.0 A Conditions IE = 750 mA, IC = 0 VCB = 1 000 V, IE = 0 ...
Description	Power Device - Power Transistors - Television/Display
File Size	86.07K / 4 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SC5957
OCR Text	...10.2 3.6 5.1 2.7 6.3 4.5 1.3 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18...hFE Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F...
Description	High-Voltage High-Speed Switching Transistors
File Size	35.79K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM400HA-24B
OCR Text	HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-24B * * * * * IC Collector current ........................ 400A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.97K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC468405
OCR Text	...Power Amplifier Applications * High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) * * Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High power diss...
Description	Strobe Flash Applications Medium Power Amplifier Applications
File Size	153.89K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA121309 2SA1213Y
OCR Text	...sat) = -0.5 V (max) (IC = -1 A) High speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic su...hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter saturatio...
Description	Power Amplifier Applications Power Switching Applications
File Size	189.84K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA197209
OCR Text	High-Voltage Switching Applications Unit: mm * High breakdown voltage: VCEO = -400 V Absolute Maximum Ratings (Ta = 25C) Characteris...hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 s Switching time Part No. IB2 Test Condition VCB =...
Description	High-Voltage Switching Applications
File Size	158.67K / 4 Page	View it Online	Download Datasheet

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