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  gate-drive Datasheet PDF File

For gate-drive Found Datasheets File :: 39706    Search Time::1.657ms    
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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. CPV364MF
OCR Text ...he same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This pac...
Description IGBT SIP MODULE Fast IGBT IGBT的高级督察模块快速IGBT

File Size 418.04K  /  8 Page

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    IRF[International Rectifier]
Part No. CPV364MU
OCR Text ...he same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This pac...
Description IGBT SIP MODULE Ultra-Fast IGBT

File Size 414.99K  /  8 Page

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    CREE[Cree, Inc]
Part No. CRF24010D
OCR Text ... Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case ...Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless DIE Di...
Description 10 W SiC RF Power MESFET Die

File Size 724.75K  /  8 Page

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    CREE[Cree, Inc]
Part No. CRF24010
OCR Text ... Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Ca...Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com/wireless 2 CRF2400 Rev .8 Elec...
Description 10 W, SiC RF Power MESFET

File Size 634.49K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series o...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    VP2206N3-G

Supertex, Inc
Part No. VP2206N3-G
OCR Text ... supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bip...drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com 2 vp2206 electrical ch...
Description P-Channel Enhancement-Mode Vertical DMOS FET

File Size 635.36K  /  6 Page

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    CREE[Cree, Inc]
Part No. CRF24060D
OCR Text ... Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case ...Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com/wireless 2 CRF24060D Preliminary ...
Description 60 W SiC RF Power MESFET Die

File Size 714.86K  /  8 Page

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    CREE[Cree, Inc]
Part No. CRF24060
OCR Text ... Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Ca...Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typica...
Description 60 W, SiC RF Power MESFET

File Size 542.87K  /  10 Page

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For gate-drive Found Datasheets File :: 39706    Search Time::1.657ms    
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