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For gate Found Datasheets File :: 108816    Search Time::1.625ms    
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    SIHD7N60E SIHD7N60E-GE3

Vishay Siliconix
Part No. SIHD7N60E SIHD7N60E-GE3
OCR Text ...d conduction losses ? ultra low gate charge (q g ) ?avalanche energy rated (uis) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? server and telecom power supplies ? switch mod...
Description E Series Power MOSFET

File Size 199.13K  /  9 Page

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    2SK3687-01MR05

Fuji Electric
Part No. 2SK3687-01MR05
OCR Text ...ed drain current i d(puls] 64 gate-source voltage v gs 30 repetitive or non-repetitive i ar 16 maximum avalanche energy e as 242.7 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 2.16...
Description N-CHANNEL SILICON POWER MOSFET

File Size 188.51K  /  4 Page

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    TY Semicondutor
Part No. 2SJ181S
OCR Text ... to source voltage v dss -600 v gate to source voltage v gss 15 v drain current i d(ds) -0.5 a drain peak current * i d(pulse) -1 a channel dissipation (tc=25 ) p ch 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw ...
Description P-Channel MOSFET

File Size 176.67K  /  2 Page

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    UTC
Part No. UTCCD4069
OCR Text ...ge input capacitance c in any gate 6 15 pf power dissipation capacitance c pd any gate (note 4) 12 pf *ac parameters are guaranteed by dc correlated testing. note 1: ''absolute maximum ratings'' are those values beyond whi...
Description Inverter Circuits

File Size 147.33K  /  5 Page

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    UPA2670T1R UPA2670T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2670T1R UPA2670T1R-E2-AX
OCR Text ... i d = ? 1.5 a) ? built-in gate protection diode ? lead-free and halogen-free ordering information part number package pa2670t1r-e2-ax ? 1 6pinhuson2020 note: ? 1.pb-free (this product does not contain pb in the external...
Description DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m

File Size 256.75K  /  7 Page

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    UPA2631T1R UPA2631T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2631T1R UPA2631T1R-E2-AX
OCR Text ... i d = ? 3.0 a) ? built-in gate protection diode ? lead-free and halogen-free ordering information part number package pa2631t1r-e2-ax ? 1 6pinhuson2020 note: ? 1.pb-free (this product does not contain pb in the external...
Description P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

File Size 236.36K  /  7 Page

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ... v, i d = 3.5 a) ? built-in gate protection diode ? lead-free and halogen-free ordering information part number package pa2600t1r-e2-ax ? 1 6pinhuson2020 note: ? 1.pb-free (this product does not contain pb in the external...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

File Size 234.58K  /  7 Page

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    TOSHIBA
Part No. TPN7R506NH
OCR Text ... high-speed switching (2) small gate charge: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 60 v) (5) enhancement mode: v th = 2....
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 237.68K  /  9 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ... transient voltage dV/dt immune gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground 5V offset CMOS Schmitt-triggered inputs ...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...sipation Linear Derating Factor gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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