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  900v 100ma Datasheet PDF File

For 900v 100ma Found Datasheets File :: 84    Search Time::1.329ms    
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    ISL2108010 ISL21080CIH330Z-TK ISL21080CIH315Z-TK

Intersil, Corp.
Intersil Corporation
Part No. ISL2108010 ISL21080CIH330Z-TK ISL21080CIH315Z-TK
OCR Text ...ence Output Voltage . . . . . 0.900v, 1.024V, 1.250V, 1.500V, 2.048V, 2.500V, 3.000V, 3.300V, 4.096V, 5.000V * Initial Accuracy: ISL21080-09...100ma Thermal Information Thermal Resistance (Typical, Notes 5, 6) JA (C/W) JC (C/W) 3 Lead SOT-...
Description 300nA NanoPower Voltage References; 3-SOT-23; Ind Temp
300nA NanoPower Voltage References; Temperature Range: Industrial; Package: 3 Ld SOT-23 T R 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO3

File Size 829.57K  /  21 Page

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    LK112M23TR

STMicroelectronics
Part No. LK112M23TR
OCR Text ...V 4.410V 4.510V 4.705V 4.800V 4.900v 5.880V 7.840V VOUT Max 1.46V 1.56V 1.86V 1.96V 2.06V 2.26V 2.36V 2.46V 2.56V 2.66V 2.96V 3.16V 3.36V 3.465V 3.565V 3.770V 3.975V 4.180V 4.280V 4.385V 4.485V 4.590V 4.690V 4.895V 5.000V 5.100V 6.120V 8.16...
Description Low noise low drop voltage regulator with shutdown function

File Size 375.34K  /  17 Page

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    C3795

Panasonic Semiconductor
Part No. C3795
OCR Text ...itions VCB = 800V, IE = 0 VCB = 900v, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A I...100ma 50mA 20mA 60 80 100 120 140 160 0 2 4 6 8 10 0.1 0.3 1 3 ...
Description Search --To 2SC3795

File Size 77.16K  /  3 Page

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    CMXD2004TO10

Central Semiconductor Corp
Part No. CMXD2004TO10
OCR Text ...s device can be configured as a 900v switching diode. See optional mounting pad configuration. MARKING CODE: X04TO SOT-26 CASE MAXIMUM R...100ma VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100 100 100 300 1.0 5.0 50 UNITS nA A V V pF ns ...
Description SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES

File Size 486.87K  /  2 Page

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    SavantIC
Part No. 2SC3636
OCR Text ...ollector cut-off current v ce =900v; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =0.8a ; v ce =5v 8 switching times t s storage time 3.0 s t f fall time v c...
Description SILICON POWER TRANSISTOR

File Size 225.60K  /  4 Page

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    2SC3637

Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2SC3637
OCR Text ...ollector cut-off current v ce =900v; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =1a ; v ce =5v 8 switching times t s storage time 3.0 | s t f fall time v cc...
Description Silicon NPN Power Transistors

File Size 101.30K  /  4 Page

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    2SC3638

Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2SC3638
OCR Text ...ollector cut-off current v ce =900v; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =1.4a ; v ce =5v 8 switching times t s storage time 3.0 | s t f fall time v ...
Description Silicon NPN Power Transistors

File Size 99.63K  /  4 Page

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    C3675

Sanyo Semicon Device
Part No. C3675
OCR Text ...fused planar silicon transistor 900v/100ma high-voltage amplifier high-voltage switching applications ordering number:en1800e 2sc3675 n2098ha (kt)/80796ts (koto) 8-9202/4237at/3195ki, ts no.1800C1/3 specifications absolute maximum ratings ...
Description Search --To 2SC3675

File Size 127.30K  /  3 Page

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