7-12ghz pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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7-12ghz Datasheet PDF File

For 7-12ghz Found Datasheets File :: 350 Search Time::1.219ms
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				United Monolithic Semiconductors
Part No.	TC2623
OCR Text	...0.1 11000 -5.33 -154.4 10.56 33.7 -19.88 2.8 -7.20 -119.6 12000 -6.32 -168.4 10.20 22.2 -19.64 -2.6 -7.38 -128.4 13000 -6.87 179.0 10.32 12....12ghz super low noise hemt ref. : dstc26237003 4 /6 specifications subject to change without notice...
Description	12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
File Size	87.11K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA160A
OCR Text	...breakdown voltage igs=1.6ma - 7 - 14 - 7 - 14 v rth thermal resistance (au - sn eutectic attach) 30 22 o c/w maximum ratings at 25 o c symbols parameters epa160a epa160av absolute ...
Description	High Efficiency Heterojunction Power FET
File Size	50.50K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
Part No.	MGF1941AL
OCR Text	...i d =30ma, f=12ghz, pin=-5dbm 7 10 -- db gs associated gain -- 9 -- db nfmin minimum noise figure v ds =3v, i d =10ma, f=12ghz -- 1.2 -- db note : p1b and glp are tested with sampling inspection. gs/nfmin are not tested. ou...
Description	Micro-X type plastic package Micro-X type plastic package
File Size	125.01K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor
Part No.	EFA080A-100F
OCR Text	7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA080A-100F Low Distortion GaAs Power FET 5DG ...
Description	Low Distortion GaAs Power FET
File Size	26.15K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EFA080A-70
OCR Text	...E +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S ...
Description	Low Distortion GaAs Power FET
File Size	18.68K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EFA080A
OCR Text	... 24.0 8.0 TYP 26.0 26.0 10.0 7.5 35 MAX UNIT dBm dB % 130 90 210 120 -2.0 300 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) ...
Description	8-12V low distortion GaAs power FET
File Size	28.54K / 2 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	CHA6105 CHA6105-99F00
OCR Text	...4 25 26 27 28 29 30 31 32 33 34 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 frequency (ghz) pout (dbm) @ 3dbc, linear gain (db) 5...12ghz driver amplifier ref. : dscha61050106 - 16 apr 10 2/8 specifications subject to change...
Description	8-12GHz Driver Amplifier
File Size	219.14K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... Mitsubishi Electric Semiconductor
Part No.	MGF4934AM07 MGF4934AM
OCR Text	... Gs 12 11 10 9 NF 8 7 6 5 4 5 10 15 20 Drain Current, ID (mA) MITSUBISHI (3/6) Associated Gain, Gs (dB) July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin fla...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	132.86K / 6 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC2211
OCR Text	7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 8...12ghz 1.5 2 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 5.5 6.5 db ...
Description	Plastic Packaged Low Noise PHEMT GaAs FETs
File Size	154.07K / 4 Page	View it Online	Download Datasheet

For 7-12ghz Found Datasheets File :: 350 Search Time::1.219ms
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