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International Rectifier
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| Part No. |
IRF1104PBF IRF1104PBF-15
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| OCR Text |
... --- --- 0.009 VGS = 10V, ID = 60a 2.0 --- 4.0 V VDS = VGS, ID = 250A 37 --- --- S VDS = 25V, ID = 60a --- --- 25 VDS = 40v, VGS = 0V A --- --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 93... |
| Description |
HEXFET POWER MOSFET ( VDSS = 40v , RDS(on) = 0.009Ω , ID = 100A )
HEXFET POWER MOSFET ( VDSS = 40v , RDS(on) = 0.009ヘ , ID = 100A )
Advanced Process Technology
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| File Size |
180.25K /
9 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK60N30
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| OCR Text |
60a n-channel mosfet v ds i d (at v gs =10v) 60a r ds(on) (at v gs =10v) < 0.056 w symbol the aok60n30 is fabricated using an...40v, i d =30a forward transconductance turn-on rise time gate source charge gate drain charge diode ... |
| Description |
300V,60a N-Channel MOSFET
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| File Size |
370.16K /
5 Page |
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it Online |
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STMICROELECTRONICS
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| Part No. |
STB200N04
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| OCR Text |
...3) 3. starting tj = 25c, i d = 60a, v dd = 25v single pulse avalanche energy 862 mj dv/dt (4) 4. i sd 60a, di/dt 440 a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4.2 v/ns t j t stg operating junction... |
| Description |
120 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
287.75K /
13 Page |
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it Online |
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