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INFINEON[Infineon Technologies AG]
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Part No. |
BGA614
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OCR Text |
...cy S11 [GHz] Mag
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.1245 0.0854 0.1133 0.1115 0.1114 0.1205 0.1165 0.1163 0.1159 0.1164 0.1099 0.0775 0.0358 0.0719 0.1365 0.1807 0.2628
S11 Ang
5.9 4.6 11.1 7.8 8.5 9.... |
Description |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
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File Size |
489.60K /
8 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TIM4450-16UL
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OCR Text |
...5 10.0 4.4 36 -47 4.4 5.0 0.6 5.0 80
f = 4.4 to 5.0GHz
add
IM3
dBc A C
Recommended gate resistance(Rg) : Rg= 100 (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturat... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
44.43K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
TIM4450-8SL
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OCR Text |
.... 39.5 9.5 2.2 36 -45 2.2 2.6 0.6 2.6 80
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS= 3V ... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
85.65K /
2 Page |
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it Online |
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SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
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Part No. |
FLL21E180IU
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OCR Text |
... 21 | scale for | s 12 | 2.0ghz 6 2.1 2.2 !freq(ghz) s11(mag) s11(ang) s21(mag) s21(ang) s12(mag) s12(ang) s22(mag) s22(ang) 0.1 0.967 177.2 1.369 157.7 0.001 51.2 0.774 -165.8 0.2 0.941 175.5 1.739 115.0 0.002 32.4 0.912 -173.7 0.3 0.942 1... |
Description |
High Voltage - High Power GaAs FET
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File Size |
154.03K /
6 Page |
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TOSHIBA
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Part No. |
TIM4450-4U
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OCR Text |
...5 11.0 1.1 37 -47 1.1 1.3 0.6 1.3 80
f = 4.4 - 5.0GHz
add
IM3
dBc A C
VDS X IDS X Rth(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
68.69K /
4 Page |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
FMM5822X
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OCR Text |
...Typ. Max. Frequency Range f VDD=6.0V 17.5 20 GHz Output Power at 1dB G.C.P. P1dB IDD(DC)=850mA typ. 30.5 32.5 dBm Power Gain at 1dB G.C.P. G...0GHz 36 34 32 Output Power [dBm] 30 28 26 24 22 20
Drain Current Pout
Output Power, Gain vs. Dra... |
Description |
K-Band Power Amplifier MMIC
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File Size |
295.63K /
14 Page |
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it Online |
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Price and Availability
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