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  350v 400v Datasheet PDF File

For 350v 400v Found Datasheets File :: 452    Search Time::1.563ms    
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    IKW75N60T08 IKW75N60T

Infineon Technologies AG
Part No. IKW75N60T08 IKW75N60T
OCR Text ... 100C 125C 150C 0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 75A, RG = 5, Dy...
Description 80 A, 600 V, N-CHANNEL IGBT, TO-247AD
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 405.52K  /  13 Page

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    CFR CFR2WS CFR100 CFR200 CFR20S CFR50S CFR-12 CFR1WS CFR-25 CFR25S CFR-50

List of Unclassifed Manufacturers
ETC[ETC]
Part No. CFR CFR2WS CFR100 CFR200 CFR20S CFR50S CFR-12 CFR1WS CFR-25 CFR25S CFR-50
OCR Text ...V 250V 500V 500V 300V 600V 500V 350v 700V 500V 400v 800V 700V 500V 1000V 1000V 500V 1000V 1000V 500V 1000V 1000V * Standard resistance is 1 ~10M , below or over this resistance on request. ENVIRONMENTAL CHARACTERISTICS PERFORMANCE TE...
Description CARBON FILM RESISTORS NORMAL & MINIATURE STYLE

File Size 44.46K  /  2 Page

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    IKW50N60T08 IKW50N60T

Infineon Technologies AG
Part No. IKW50N60T08 IKW50N60T
OCR Text ... 100C 125C 150C 0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 50A, RG = 7, Dy...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 411.93K  /  13 Page

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    IKP20N60T IKP20N60T08

Infineon Technologies AG
Part No. IKP20N60T IKP20N60T08
OCR Text ...00C 125C 150C 0.0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 20A, RG = 12, D...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 448.94K  /  14 Page

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    FGB5N60UNDF

Fairchild Semiconductor
Part No. FGB5N60UNDF
OCR Text ... circuit withstand time v cc = 350v, r g = 100 , v ge = 15v, t c = 150 o c 10 - - s 3 www.fairchildsemi.com fgb5n60undf rev. a ...400v, i c = 5a, v ge = 15v - 12.1 nc q ge gate to emitter charge - 1.7 nc q...
Description 600V, 5A Short Circuit Rated IGBT

File Size 789.30K  /  9 Page

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    IKP15N60T07 IKP15N60T

Infineon Technologies AG
Part No. IKP15N60T07 IKP15N60T
OCR Text ... J 0.2m J E on * 0.0m J 300V 350v 400v 450V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 15A, RG = 15, Dynamic test circuit in...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 454.22K  /  14 Page

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    IHW40N60T08 IHW40N60T

Infineon Technologies A...
Infineon Technologies AG
Part No. IHW40N60T08 IHW40N60T
OCR Text ...100C 125C 150C 0.0mJ 300V 350v 400v 450V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 40A, RG = 5.6, Dynamic test cir...
Description Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

File Size 377.63K  /  12 Page

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    INTERSIL[Intersil Corporation]
Part No. IRFF310 FN1888
OCR Text ...SS = 400v, RL = 126 for BVDSS = 350v (Figures 17, 18), MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 1.35A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is Essenti...
Description 1.35A, 400v, 3.600 Ohm, N-Channel Power MOSFET
From old datasheet system
1.35A 400v 3.600 Ohm N-Channel Power MOSFET
1.35A/ 400v/ 3.600 Ohm/ N-Channel Power MOSFET

File Size 324.08K  /  7 Page

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    ADPOW
Part No. APTC60HM35T3
OCR Text ... 0V, IS = - 72A IS = - 72A VR = 350v diS/dt = 200A/s Tj = 25C Tj = 25C 580 46 1.2 6 V V/ns ns C APTC60HM35T3 - Rev 0 September, 2004 ...400v RG=2.5 TJ=125C L=100H Rise and Fall times vs Current VDS=400v RG=2.5 T J=125C L=100H 100...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 334.47K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTC60HM70T3 APTC60HM35T3
OCR Text ... 0V, IS = - 39A IS = - 39A VR = 350v diS/dt = 100A/s Tj = 25C Tj = 25C 580 23 1.2 6 V V/ns ns C APTC60HM70T3 - Rev 0 September, 2004 ...400v RG=5 TJ=125C L=100H Rise and Fall times vs Current VDS=400v RG=5 T J=125C L=100H 100 tr...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 334.46K  /  6 Page

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