...s
q q q
7.50.2 Solder Dip 4.0 14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB941 2SB941A 2SB94...3 35 2 150 -55 to +150 Unit V
emitter voltage 2SB941A Emitter to base voltage Peak collector curr...
Description
Silicon PNP epitaxial planar type power transistor Silicon PNP epitaxial planar type(For low-frequency power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR
...s
q q q
7.50.2 Solder Dip 4.0 14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB942 2SB942A 2SB94...3
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitt...
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)
...150 -55 to +150 Unit
16.70.3 14.00.5
V
emitter voltage 2SB947A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V V A A W C C
...
...2
s Features
q q q
16.70.3 14.00.5
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings -40 -50 -20 -40 -5 -20 -10 40 2 ...
...50.2
s Features
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB949 2SB949A 2SB949 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.0
1.40.1
1.30.2
Solder Dip
0.5 +0.2 -0.1 ...
... Unit V
16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.0
1.40.1
1.30.2
Solder Dip
0.5 -0.1 0.80....
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)