1.8.8v pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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1.8.8v Datasheet PDF File

For 1.8.8v Found Datasheets File :: 60795 Search Time::1.89ms
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				INTERSIL[Intersil Corporation]
Part No.	ICM7226 ICM7226A ICM7226ALJL ICM7226B ICM7226BLPL FN3169
OCR Text	...ion 1999 File Number 3169.1 9-15 ICM7226A, ICM7226B Pinouts ICM7226A COMMON ANODE (CERDIP) TOP VIEW CONTROL INPUT INPUT B MEASUREMENT IN PROGRESS FUNCTION STORE BCD 4 BCD 8 DP SEG e 1 2 3 4 5 6 7 8 9 40 INPUT A 39 HOLD 38 BUF ...
Description	From old datasheet system 8-Digit, Multi-Function, Frequency Counter/Timer
File Size	172.61K / 19 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...GE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handli...8.1 5.1 32 20 75 0.6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 2...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...Typ. --- 0.50 --- --- Max. 1.7 --- 62 40 Units C/W Notes through are on page 11 www.irf.com 1 7/5/00 IRF3706/3706S/3...8.5 VGS = 10V, ID = 36A 7.3 10.5 m VGS = 4.5V, ID = 28A 11 22 VGS = 2.8V, ID = 18A --- 2.0 V VDS ...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...8/22/00 IRF3708/3708S/3708L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-S...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... A D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS I...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...0 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 1.4 40 Units C...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...0 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- -...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMI...8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN....
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	...rent applications S S S G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and swi...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...GE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pr...8 x Rated BVDSS, VGS = 0V TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = -10A, VGS =...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

For 1.8.8v Found Datasheets File :: 60795 Search Time::1.89ms
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