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  0.5-20ghz Datasheet PDF File

For 0.5-20ghz Found Datasheets File :: 257    Search Time::6.734ms    
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    TGA4502-SCC

TriQuint Semiconductor
Part No. TGA4502-SCC
OCR Text ... OTOI 15 dB Nominal Return Loss 0.25 um pHEMT 2MI Technology Bias 7V @ 760 mA Chip Dimensions 1.52 x 3.29 x .1mm Product Description The...5.3 W 150 C 320 C -65 to 150 C NOTES 2/ VI+ | IG | PIN PD TCH TM TSTG 1/ 2/ 2/ 2/ 2/, 3/ 4...
Description K Band High Power Amplifier

File Size 150.34K  /  11 Page

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    TGA4530

TriQuint Semiconductor
Part No. TGA4530
OCR Text ...turn Loss Bias 5 - 7 V @ 825 mA 0.25 um 3MI pHEMT technology Chip Dimensions 2.43 x 1.45 x .1mm Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 825mA 25 20 Gain 15 IRL 10 ORL 5 0 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19....
Description K Band High Linearity Power Amplifier

File Size 251.02K  /  12 Page

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    CHX2091 CHX2091-99F_00 CHX2091-99F/00

United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
http://
Part No. CHX2091 CHX2091-99F_00 CHX2091-99F/00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. Typical...5 0 -5 -10 -15 -20 -25 -30 16 17 18 19 20 21 22 23 Pout (2*Fin) Pout (Fin) Input Frequency ...
Description 20-40GHz Frequency Multiplier 20 - 40GHz的倍频

File Size 83.68K  /  5 Page

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    United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
Part No. CHA2291-99F_00 CHA2291 CHA2291-99F/00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5:1 5 [-0.7, +1.2] 25 180 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bi...
Description 10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声,可变增益放大

File Size 134.80K  /  6 Page

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    UMS[United Monolithic Semiconductors]
Part No. CHA2292-99F_00 CHA2292 CHA2292-99F/00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5:1 5 [-0.7, +1.2] 35 160 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bi...
Description KJA 79C 79#22D PIN PLUG
17-24GHz Low Noise, Variable Gain Amplifier

File Size 135.23K  /  6 Page

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    http://
UMS[United Monolithic Semiconductors]
Part No. CHA3063-99F_00 CHA3063 CHA3063-99F/00
OCR Text ...actured with a PMHEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is su...5.5-23GHz 21dBm output power (Psat) 19dB gain, 1dB gain flatness PAE:11%@P-1dB typical Chip size : ...
Description 5.5-23GHz Driver Amplifier

File Size 153.05K  /  7 Page

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    UMS[United Monolithic Semiconductors]
Part No. CHA5293A-99F_00 CHA5293A CHA5293A-99F/00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 0 -5 -10 -15 -20 12 14 16 18 20 Vg3 Vd3 Main Features Performances : 17-24GHz 30dBm outpu...
Description 17-24GHz High Power Amplifier

File Size 147.96K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. F0100604B
OCR Text 02.03.04 Features * Low voltage of +5.0 /-3.5V power supply * 400 high transimpedance * Typical 9.0 GHz broad bandwidth * 17.0 dB high gain * Over 18 dB wide dynamic range * Excellent equivalent input noise current of 10 pA/Hz1/2 F0...
Description 10 Gb/s Receiver Transimpedance Amplifier

File Size 1,026.01K  /  9 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FMM5822X
OCR Text ...p.) *Frequency Band ; 17.5 - 20.0 GHz *High Linearity ; OIP3 = 41dBm *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications ...
Description K-Band Power Amplifier MMIC

File Size 295.63K  /  14 Page

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