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  -900v Datasheet PDF File

For -900v Found Datasheets File :: 1633    Search Time::3ms    
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    APT15GP90B06 APT15GP90BG

Advanced Power Technology
Part No. APT15GP90B06 APT15GP90BG
OCR Text ...ctor cut-off current (v ce = 900v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 900v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volt...
Description The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs

File Size 389.11K  /  6 Page

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    APTCV90TL12T3G

Microsemi Corporation
Part No. APTCV90TL12T3G
OCR Text ... = 80C CoolMOSTM Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching loss...
Description Three level inverter CoolMOS & Trench Field Stop IGBT4 Power Module

File Size 237.08K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOTF6N90
OCR Text 900v,6a n-channel mosfet v ds i d (at v gs =10v) 6a r ds(on) (at v gs =10v) < 2.2 w symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q jc * drain current limited by maximum ...
Description 900V,6A N-Channel MOSFET

File Size 363.18K  /  5 Page

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    ST Microelectronics
Part No. STGW30N90D
OCR Text ... 1 1/10 10 stgw30n90d n-channel 900v - 30a - to-247 very fast powermesh? igbt features low on-losses low on-voltage drop (v cesat ) high current capability high input impedance (voltage driven) low gate charge ideal for soft sw itchin...
Description IGBT

File Size 178.22K  /  10 Page

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    APTGT200DA170D3G

Microsemi Corporation
Part No. APTGT200DA170D3G
OCR Text ...V f = 1MHz VGE=15V, IC=200A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 VGE = 15V Tj = 25C VBus = 900V Tj = 125C IC = 200A Tj = 25C RG = 6.8...
Description Boost chopper Trench Field Stop IGBT Power Module

File Size 209.70K  /  5 Page

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    STGW30N90D GW30N90D

STMicroelectronics N.V.
Part No. STGW30N90D GW30N90D
OCR Text 900V - 30A - TO-247 Very fast PowerMESHTM IGBT Preliminary Data Features Type STGW30N90D VCES 900V VCE(sat) @25C < 2.75V IC @100C 30A Low on-losses Low on-voltage drop (Vcesat) High current capability High input impe...
Description N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT N沟道900V - 30A47 IGBT的非常快速PowerMESH

File Size 139.56K  /  10 Page

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    APTGT600U170D4G

Microsemi Corporation
Part No. APTGT600U170D4G
OCR Text ...V f = 1MHz VGE=15V, IC=600A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 VGE = 15V Tj = 125C VBus = 900V IC = 600A Tj = 125C RG = 2.4 VGE 15V...
Description Single switch Trench Field Stop IGBT Power Module

File Size 195.75K  /  5 Page

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    2SK2652 2SK2652-01

FUJI[Fuji Electric]
Part No. 2SK2652 2SK2652-01
OCR Text ...che Rated N-channel MOS-FET 900V 2,5 6A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings...
Description N-channel MOS-FET

File Size 312.06K  /  2 Page

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    Q40N-5 Q101N-5 Q02-12 Q02-24 Q02-5 Q80-50 Q20-5 Q06-12 Q06-24 Q06-5 Q10-5 Q10-12 Q10-24 Q12-5 Q01-12 Q50-5 Q40-5 Q09-5 Q

Powerbox
Part No. Q40N-5 Q101N-5 Q02-12 Q02-24 Q02-5 Q80-50 Q20-5 Q06-12 Q06-24 Q06-5 Q10-5 Q10-12 Q10-24 Q12-5 Q01-12 Q50-5 Q40-5 Q09-5 Q09-12 Q09-24 Q30-5 Q15-5 Q07-12 Q07-24 Q04-12 Q04-24 Q04-5 Q08-12 Q08-5 Q05-12 Q05-24 Q05-5 Q03-5 Q03-24 Q03-12 Q60-5
OCR Text ...25% <10mA Q09-5 0 to 5V 0 to +/-900v 0.555 mA <0.30% <50mA Q09-12 0 to 12V 0 to +/-900v 0.555 mA <0.25% <20mA Q09-24 0 to 24V 0 to +/-900v 0.555 mA <0.30% <10mA Q10-5 0 to 5V 0 to 1,000V 0.5 mA <0.25% <50mA Q10-12 0 to 12V 0 to 1,000V 0.5 m...
Description 0.5 WATTS - 100 - 10KV SINGLE OUTPUT DC/DC INDUSTRIAL

File Size 1,087.09K  /  3 Page

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    APTGT75DA170D1G

Microsemi Corporation
Part No. APTGT75DA170D1G
OCR Text ...5V f = 1MHz VGE=15V, IC=75A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 75A RG = 18 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 75A RG = 18 VGE = 15V Tj = 125C VBus = 900V IC = 75A Tj = 125C RG = 18 VGE 15V ; VBu...
Description Boost chopper Trench Field Stop IGBT Power Module

File Size 178.53K  /  4 Page

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