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  to-247 Datasheet PDF File

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    Z87200

ZILOG[Zilog, Inc.]
Part No. Z87200
OCR Text ...des Allows High Processing Gain to Maximize the Acquisition Probability, then Reduced Code Length for Increased Data Rate Reduced Power Cons...247 regulations require a minimum processing gain of 10 dB for unlicensed operation in the Industria...
Description Spread-Spectrum Transceiver

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    2SB1590K 2SD2444K

Rohm Co., Ltd.
Part No. 2SB1590K 2SD2444K
OCR Text ...ts described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Appli...
Description Power Transistor (-15V, -1A, 15V, 1A) 功率晶体管(- 15V的,- 1A型,15V的,1A)条
Power Transistor (-15V/ -1A/ 15V/ 1A)

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    2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC409

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC4093R26-T2 2SC4093R28-T2 2SC4093RBF-T2 2SC4093RBG-T2 2SC4093RBF-T1 2SC4093NE85639E 2SC4093-T2-R26 2SC4093-T2-R27 2SC4093R-T1
OCR Text ....8 -0.3 +0.2 1.5 -0.1 2 3 4 5 0 to 0.1 5 +0.2 +0.1 +0.1 FEATURES * Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz...247 0.227 0.212 0.198 0.186 S22 42.5 41.2 41.0 42.5 43.2 47.8 53.0 62.2 67.4 75.5 4 2SC409...
Description    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 100mA的一(c)|的SOT - 143VAR
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 微波低噪声放大器NPN硅外延晶体管4个引脚微型模
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-143VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Discrete
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
For amplify high frequency and low noise.

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ...e Voltage B2LL T-MAXTM TO-264 LLL * Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package D G ...247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters a...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ... T-MAXTM Package (Clip-mounted to-247 Package) G FREDFET S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All R...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ... T-MAXTM Package (Clip-mounted to-247 Package) G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted to-247 Package)

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ...wer Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE MAXIMUM RAT...247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters a...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ...izing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exc...247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters a...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

File Size 64.96K  /  4 Page

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ...izing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exc...247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeter...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

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