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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU30120R
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| OCR Text |
...ting . d iode characteristics v sd diode forward voltage i sd = 60 a, v gs =0v 1. 2 v t rr reverse recovery time 45 ns q rr reverse recovery charge i sd = 60 a, dl sd /dt=100a/ m s 9 0 nc dynamic characteristics r g gate resistance v g... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
280.53K /
9 Page |
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it Online |
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IXYS
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| Part No. |
IXFN34N100
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| OCR Text |
...a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = ...306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 ... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
566.61K /
4 Page |
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it Online |
Download Datasheet |
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IXYS Corporation
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| Part No. |
IXTH41N25
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| OCR Text |
...e width limited by t jm 164 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 0.5 i s , -di/dt ...306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 ... |
| Description |
N-Channel Enhancement Mode
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| File Size |
556.35K /
4 Page |
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it Online |
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IXYS CORP
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| Part No. |
IXTK75N30
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| OCR Text |
...e width limited by t jm 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100...306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 ... |
| Description |
75 A, 300 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
118.28K /
4 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXFN27N80 IXFK25N80
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| OCR Text |
...h limited by t jm 25n80 100 a v sd i f = 100 a, v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt =...306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 25n80 ixfk 27n80 ixfn 25n... |
| Description |
(IXFx2xN80) HiPerFETTM Power MOSFETs
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| File Size |
293.71K /
4 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
IXFN44N80
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| OCR Text |
...a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = 25a...306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 v sd - volts 0.2 0.4 0.6 0.8... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
139.46K /
4 Page |
View
it Online |
Download Datasheet |
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