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For mb-10 Found Datasheets File :: 11934 Search Time::1.718ms
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				Sharp Electrionic Components
Part No.	GP2W3120YP0F
OCR Text	mb/s (fir) low profile low consumption current applications 1. mobile equipment (cellular phone, pager, smart phone, pdas, portab...10. with lp/hp mode switching function 11. with v io terminal agency approvals/compliance 1. compl...
Description	IrDA Compliant Transceiver Module 9.6 kb/s to 4 Mb/s (FIR) Low Profile Low Consumption Current
File Size	350.99K / 15 Page	View it Online	Download Datasheet

				Protek Devices
Part No.	PRSB6.8D12
OCR Text	...se specifed p a r a m ete r s y mb ol v alue unit s peak pulse power (tp = 10/1000s) - see figure 1 p pp 10 wats operatng temperature t a -55 to 150 c storage temperature t stg -55 to 150 c juncton temperature t j 150 c elect r ical cha r...
Description	LOW CAPACITANCE TVS COMPONENT
File Size	362.65K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVMFS5830NLT3G NVMFS5830NLT1G
OCR Text	...tinuous drain cur- rent r j ? mb (notes 1, 2, 3, 4) steady state t mb = 25 c i d 185 a t mb = 100 c 131 power dissipation r j ? mb ...10 s i dm 1012 a operating junction and storage temperature t j , t stg ? 55 to + 175 c source c...
Description	40 V, 2.3 m, 185 A, Single N?Channel
File Size	112.17K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVMFS5832NLT1G NVMFS5832NLT3G
OCR Text	...tinuous drain cur- rent r j ? mb (notes 1, 2, 3, 4) steady state t mb = 25 c i d 120 a t mb = 100 c 84 power dissipation r j ? mb ...10 s i dm 557 a operating junction and storage temperature t j , t stg ? 55 to + 175 c source cu...
Description	40 V, 4.2 m, 120 A, Single N?Channel
File Size	114.31K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK7Y102-100B
OCR Text	...formation Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to dr...10 V; see Figure 1; see Figure 4 Tmb = 100 C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(A...
Description	N-channel TrenchMOS standard level FET
File Size	166.31K / 14 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVMFS5844NLT3G NVMFS5844NLT1G NTMFS5844NL NTMFS5844NLT1G
OCR Text	...tinuous drain cur- rent r j ? mb (notes 1, 2, 3, 4) steady state t mb = 25 c i d 61 a t mb = 100 c 43 power dissipation r j ? mb (...10 s i dm 247 a current limited by package (note 4) t a = 25 c i dmaxpkg 80 a operating junctio...
Description	Power MOSFET 60 V, 61 A, 12 m, Single N.Channel
File Size	112.91K / 6 Page	View it Online	Download Datasheet

				Fujitsu Component Limited.
Part No.	TX150
OCR Text	...essor (2c/4t, 3.06 ghz, tlc: 4 mb, turbo: no, 1333 mhz, 73 w) intel? core? i3-550 processor (2c/4t, 3.20 ghz, tlc: 4 mb, turbo: no, 1333 m...10, 1333 mhz, 45 w) intel? xeon? processor x3430 (4c/4t, 2.40 ghz, tlc: 8 mb, turbo: 1/1/2/3, 1333 ...
Description	Fujitsu PRIMERGY TX150 S7 Mono-Socket Intel? Xeon? processor server
File Size	151.74K / 10 Page	View it Online	Download Datasheet

				Protek Devices
Part No.	SFC05-411
OCR Text	...se specifed p a r a m ete r s y mb ol value unit s peak pulse power (tp = 8/20s) - see figure 1 p pp 300 wats operatng temperature t a -55 t...10 150 only one name means protektion? www.protekdevices.com 05131.r8 2/11 page 3 05131 sfc05-4...
Description	300w flip chip tvs array
File Size	845.44K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHB7N60E PHP7N60E PHW7N60E
OCR Text	...STANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MI...10 54 5.5 30 17 31 88 34 3.5 4.5 7.5 930 120 70 1.2 4.0 100 500 200 80 7 45 V %/K V S A A nA nC nC ...
Description	PowerMOS transistors Avalanche energy rated
File Size	91.11K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHW7N60
OCR Text	...ERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CON...10 V; ID = 4.1 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 4.1 A VDS = 600 V; VGS = 0 V VDS = 480 V; ...
Description	PowerMOS transistor
File Size	51.89K / 7 Page	View it Online	Download Datasheet

For mb-10 Found Datasheets File :: 11934 Search Time::1.718ms
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