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Harris, Corp.
Fairchild Semiconductor
HARRIS[Harris Corporation]
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| Part No. |
HGTG12N60C3D
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| OCR Text |
...EON EOFF VEC trr
TJ = 150oC, ice = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H
IEC = 12A IEC = 12A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s
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Thermal Resistance
RJC
IGBT Diode
NOTE: 3. Turn-Off Energy... |
| Description |
36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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| File Size |
102.34K /
7 Page |
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it Online |
Download Datasheet
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFY5N03
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| OCR Text |
... a lu e s b ey ond w h ich de v ice d a mage can o c c u r . m ax imum ra t in g s ap p li e d to the de v ice a r e in d i v id u al st r e s s limit v a lu e s (n o t no r mal o p e r a ti n g co n d i ti o n s ) a nd a r e not v a lid si... |
| Description |
30V N?Channel MOSFET
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| File Size |
379.67K /
5 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFY3N02
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| OCR Text |
... a lu e s b ey ond w h ich de v ice d a mage can o c c u r . m ax imum ra t in g s ap p li e d to the de v ice a r e in d i v id u al st r e s s limit v a lu e s (n o t no r mal o p e r a ti n g co n d i ti o n s ) a nd a r e not v a lid si... |
| Description |
20V N?Channel MOSFET
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| File Size |
278.20K /
6 Page |
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it Online |
Download Datasheet |
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