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				Renesas Electronics Corporation
Part No.	FS5ASJ-2-T13
OCR Text	..., i d = 2 a, v gs = 10 v, r gen = r gs = 50 ? source-drain voltage v sd ? 1.0 1.5 v i s = 2 a, v gs = 0 v thermal resistance r th(ch-c) ? ? 6.25 c/w channel to case reverse recovery time t rr ? 80 ? ns i s = 5 a, d ...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	188.79K / 7 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc.
Part No.	FY4AEJ-03
OCR Text	... 15v, i d = 2a, v gs = 10v, r gen = r gs = 50 w i s = 1.7a, v gs = 0v channel to ambiet i s = 1.7a, d is /d t = C50a/ m s 1.5 23 40 8 550 220 115 12 20 40 40 0.75 100 0.1 0.1 2.0 30 55 1.10 78.1 C30 C1.5 ...
Description	FY4AEJ-03 FY4AEJ - 03
File Size	144.04K / 9 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp.
Part No.	CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1514KV18-250BZXI CY7C1525KV18 CY7C1512KV18-350BZC
OCR Text	...kv18) 4m x 8 array clk a (21:0) gen. k k control logic address register d [7:0] read add. decode read data reg. rps wps control logic address register reg. reg. reg. 8 22 16 8 nws [1:0] v ref write add. decode write reg 8 a (21:0) 22 cq cq ...
Description	72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
File Size	603.26K / 33 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation http://
Part No.	FS50KMJ-03F-A8
OCR Text	...v, i d = 25 a, v gs = 10 v, r gen = r gs = 50 ? source-drain voltage v sd ?1.01.5 vi s = 25 a, v gs = 0 v thermal resistance rth(ch-c) ? ? 5.00 c/w channel to case reverse recovery time t rr ?50?nsi s = 25 a, dis/dt = ? 50a/ s f...
Description	High-Speed Switching Use Nch Power MOS FET
File Size	99.84K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS50ASJ-03F-T13 FS50ASJ-03F
OCR Text	...v, i d = 25 a, v gs = 10 v, r gen = r gs = 50 ? source-drain voltage v sd ?1.01.5 vi s = 25 a, v gs = 0 v thermal resistance rth(ch-c) ? ? 2.5 c/w channel to case diode reverse recovery time t rr ?50?nsi s = 25 a, dis/dt = ? 50 a/ ...
Description	Transistors>Switching/MOSFETs High-Speed Switching Use Nch Power MOS FET
File Size	99.04K / 7 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
Part No.	CY7C1312BV18-167BZXC CY7C1310BV18-167BZXC CY7C1314BV18-167BZXC CY7C1910BV18 CY7C1910BV18-167BZXC CY7C1310BV18-200BZC CY7C1310BV18-250BZC CY7C1910BV18-200BZC CY7C1910BV18-250BZC CY7C1314BV18-200BZC CY7C1314BV18-250BZC CY7C1312BV18-167BZC
OCR Text	...am (cy7c1310bv18) clk a (19:0) gen. k k control logic address register d [7:0] read add. decode read data reg. rps wps q [7:0] control logic address register reg. reg. reg. 8 20 8 16 8 nws [1:0] v ref write add. decode 8 a (19:0) 20 c c 8 ...
Description	18-Mbit QDR-II SRAM 2-Word Burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
File Size	261.59K / 23 Page	View it Online	Download Datasheet

				PanJit International Inc.
Part No.	BSS8402DWT/R13 BSS8402DWT/R13-R BSS8402DWT/R7-R
OCR Text	... = 25ohm, v = 10v dd d gen gen note 2. short duration test pulse used to minimize self-heating gs t =25c l 1 v = 10v, i = 0.5a gs d - 2.0 7.0 ohms 0.5 1.65 - a ds gs v = 10v, v = 7.5v on-state drain current i d(on ) ...
Description	COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
File Size	124.58K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MC12040FN MC12040P
OCR Text	...To Scope Channel A 5.0F 1 Pulse gen 1 Pulse gen 2 D 9 V D 12 6 R 14 4 U 3 U 11 To Scope Channel B PRF = 5.0MHz Duty Cycle = 50% t+ = t- = 1.5ns 0.2ns 0.1F 7 t- Pulse gen 1 50% 90% 10% 20ns Pulse gen 2 t+- Output Waveform A t++ Output Wav...
Description	PHASE-FREQUENCY DETECTOR
File Size	96.99K / 5 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V58C2512404SBI6I
OCR Text	...ses column addresses dll strobe gen. data strobe ck, ck ck dqs 64m x 8 8192 x 2048 8192 x 2048 8192 x 2048 6 v58c2512(804/404/164)sbi rev. 1.4 march 2007 promos technologies v58c2512(804/404/164)sbi block diagram row decoder memory arr...
Description	128M X 4 DDR DRAM, 0.7 ns, PDSO66
File Size	924.79K / 61 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V58C2256164SCE5B
OCR Text	...ses column addresses dll strobe gen. data strobe ck, ck ck dqs 8192 x 1024 x 8 8192 x 1024 x 8 8192 x 1024 x 8 64m x 4 6 promos technologies v58c2256(804/404/164)sc v58c2256(804/404/164)sc rev. 2.4 may 2006 block diagram row decoder memo...
Description	16M X 16 DDR DRAM, 0.65 ns, PDSO66
File Size	917.36K / 61 Page	View it Online	Download Datasheet

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