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NTX1N 11245FAS VBXXXXX 2864A L6223E AU6390 KA3844BD MC13191
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    Continental Device Indi...
Part No. CNL635
OCR Text ...ltage v ebo v collector cut-off current na m a base emitter on voltage *v be (on) v collector emitter saturation voltage *v ce(sat) v cnl635...limited data sheet page 1 of 5 silicon planar epitaxial transistors cnl635 cpl636 cnl637 cpl638 cn...
Description    SILICON PLANAR EPITAXIAL TRANSISTORS

File Size 343.57K  /  5 Page

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    IRFB7740PBF-15

International Rectifier
Part No. IRFB7740PBF-15
OCR Text ...voltage fig 2. maximum drain current vs. case temperature to-220ab irfb7740pbf s d g g d s gate drain source 4 8 12 16 20 v gs , ...limited) single pulse avalanche energy ?? 160 mj e as (thermally limited) single pulse avalanc...
Description    Brushed Motor drive applications

File Size 528.65K  /  10 Page

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    MORE Semiconductor Comp...
Part No. MSN6001D
OCR Text ...acterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation ...limited http://www.moresemi.com 1/5 msn6001d 600v(d-s) n...
Description    600V(D-S) N-Channel Enhancement Mode Power MOS FET

File Size 811.11K  /  5 Page

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    MORE Semiconductor Comp...
Part No. MSN6004D
OCR Text ...acterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation ...limited http://www.moresemi.com 1/5 msn6004d 600v(d-s) n...
Description    600V(D-S) N-Channel Enhancement Mode Power MOS FET

File Size 753.88K  /  5 Page

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    MORE Semiconductor Comp...
Part No. MSN6007F
OCR Text ... - v zero gate voltage drain current i dss v ds =600v,v gs =0v - - 1 a gate-body leakage current i gss v gs =30v,v ds =0v ...limited http://www.moresemi.com 3/5 msn6007f c , c a p a c ...
Description    Thermal Resistance,Junction-to-Case

File Size 540.57K  /  4 Page

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    IRF610S

Vishay Siliconix
Part No. IRF610S
OCR Text ...k (to-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 w in a...limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 8...
Description    Surface mount

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...tion * Overvoltage protection * Current limitation * Analog driving possible P-TO252-3-11 Product Summary Drain source voltage On-state ...limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DU...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ...e (IC = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuou...Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor ...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    SQD100N03-3M4 SQD50P06-15L SQD50N04-5M6 SQD25N06-22L SQD23N06-31L SQD50N05-11L SQD10N30-330H SQD40N06-14L SQD40N10-25 SQ

Vishay Siliconix
Part No. SQD100N03-3M4 SQD50P06-15L SQD50N04-5M6 SQD25N06-22L SQD23N06-31L SQD50N05-11L SQD10N30-330H SQD40N06-14L SQD40N10-25 SQD40P10-40L SQD97N06-6M3L
OCR Text ...tage v gs 20 continuous drain current t c = 25 c i d - 20 a t c = 125 c - 11 continuous source curr ent (diode conduction) a i s - 25 ...limited b y 10 ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 b v dss limited i dm limited sq u are wave p...
Description    Automotive P-Channel 60 V (D-S) 175 °C MOSFET

File Size 177.55K  /  10 Page

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    SQD07N25-350H SQD25N06-22L SQD50N05-11L SQD10N30-330H SQD40N06-14L SQD40N10-25 SQD40P10-40L SQD97N06-6M3L

Vishay Siliconix
Part No. SQD07N25-350H SQD25N06-22L SQD50N05-11L SQD10N30-330H SQD40N06-14L SQD40N10-25 SQD40P10-40L SQD97N06-6M3L
OCR Text ...age v gs 20 continuous drain current t c = 25 c i d - 38 a t c = 125 c - 22 continuous source curr ent (diode conduction) a i s - 50 ...limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 ...
Description    Automotive P-Channel 100 V (D-S) 175 °C MOSFET

File Size 178.09K  /  10 Page

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