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CREE[Cree, Inc]
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| Part No. |
C460UT230-S0100
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| OCR Text |
cree's UltraThin LEDs combine highly efficient InGaN materials with cree's proprietary G*SiC(R) substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward... |
| Description |
UltraThin⑩ LEDs
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| File Size |
194.87K /
4 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH27015F
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| OCR Text |
cree's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier appl... |
| Description |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
1,491.88K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH27030F
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| OCR Text |
cree's CGH27030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier... |
| Description |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
682.23K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH27060F
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| OCR Text |
cree's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifie... |
| Description |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
754.23K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH35015F
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| OCR Text |
cree's CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the... |
| Description |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
703.49K /
9 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH35030F
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| OCR Text |
cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier... |
| Description |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
653.35K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HE... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40025F
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| OCR Text |
cree's CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HE... |
| Description |
25 W, RF Power GaN HEMT
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| File Size |
940.07K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
cree's CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HE... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CRF24010D
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| OCR Text |
cree's CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri... |
| Description |
10 W SiC RF Power MESFET Die
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| File Size |
724.75K /
8 Page |
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it Online |
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