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| Part No. |
MT8VDDT1664HDG-335XX
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| OCR Text |
...8k (a0?a12) 16k (a0?a13) device bank address 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) device configuration 128mb (8 meg x 16) 256mb (16 meg x 16) 512mb (32 meg x 16) 1gb (64 meg x 16) column address 512 (a0?a8) 512 (a0?a8) 1k (a0... |
| Description |
16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
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| File Size |
490.71K /
14 Page |
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it Online |
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| Part No. |
MT48LC16M32L2F5-10
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| OCR Text |
...t 8k row addressing 8k (a0?a12) bank addressing 4 (ba0, ba1) column addressing 512 (a0?a8)
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512... |
| Description |
16M X 32 SYNCHRONOUS DRAM, PBGA90
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| File Size |
248.66K /
10 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT16LSDT464A
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| OCR Text |
... command are used to select the bank and row to be accessed (ba0 selects the bank; a0-a10 select the row). the address bits registered coincident with the read or write command are used to select the starting column location for the burst a... |
| Description |
4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??
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| File Size |
261.57K /
19 Page |
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it Online |
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SPANSION LLC
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| Part No. |
MBM29DL32BF70PBT-E1
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| OCR Text |
...nized into four physical banks; bank a, bank b, bank c and bank d, which are considered to be four separate memory arrays operations. it is the fujitsu?s standard 3.0 v only flash memories, with the additional cap ability of allowing a norm... |
| Description |
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
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| File Size |
496.58K /
76 Page |
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it Online |
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