... v ceo(sus) = 45v(min)- bdw51; 60v(min)- bdw51a 80v(min)- bdw51b; 100v(min)- bdw51c complement to type bdw52/a/b/c applications de...10a; i b = 2.5a 3.0 v v be(sat) base-emitter saturation voltage i c = 10a; i b = 2.5a 2...
... ceo(sus) = -45v(min)- bdw52; -60v(min)- bdw52a -80v(min)- bdw52b; -100v(min)- bdw52c complement to type bdw51/a/b/c applications ...10a; i b = -2.5a -3.0 v v be(sat) base-emitter saturation voltage i c = -10a; i b =- 2.5a ...
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BDS14 BDS15 -60v -80V -100V -60v -80V -100V -5V -15A -5A 90W -65 TO 200C 200C
PRELIM. 7/00
LAB
Parameter
ICBO Colle...10a IC = -10a IC = -5A IC = -0.5A IC = -5A IC = -10a IC = -0.5A
V V V
40 15 5 3
MHz
*Pul...
Description
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES