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Toshiba, Corp.
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| Part No. |
MT3S113P
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| OCR Text |
...ency transistor process of f t =60ghz class is used for this product. please make enough tool and equipment earthed when you handle.
mt3s113p 2014-03-01 3 h fe -i c i c -v be dc current gain hfe 10 100 1000 110100 co... |
| Description |
Radio-frequency SiGe Heterojunction Bipolar Transistor
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| File Size |
194.31K /
7 Page |
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SGS Thomson Microelectronics
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| Part No. |
START620
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| OCR Text |
...f up to 45ghz and fmaxs of over 60ghz. the start620 offers the best mix of gain and nf for given breakdown voltage(bvceo = 3.3v). it reaches performance level only achieved with gaas products before. absolute maximum ratings symbol pa... |
| Description |
NPN SIGE RF TRANSISTOR
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| File Size |
27.83K /
5 Page |
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List of Unclassifed Man...
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| Part No. |
EMCORE-I2501-D25 EMCORE-I2501-N26 EMCORE-I2501D-N26
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| OCR Text |
...al i/o intel? atom n2600 at 1.60ghz/ d2550 at 1.86ghz 1 x so-dimm socket (top side) intel? nm10 express chipset pch serial ata port0 1 x sata 4 x usb ports usb bh dmix4 for cedarview-d com1 ~ com2 lpc i/f 1066mhz single channel ddr3 dig... |
| Description |
3.5?Intel? Atom?N2600/ D2550 Compact Board
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| File Size |
599.49K /
2 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA4600-EPU
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| OCR Text |
60GHz Low Noise Amplifier
Key Features
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TGA4600-EPU
Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain Bias 3.0 V, 41 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.62 x 0.84 x 0.10 mm (0.0... |
| Description |
60 GHz Low-Noise Amplifier
60GHz Low Noise Amplifier
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| File Size |
123.48K /
8 Page |
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it Online |
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Price and Availability
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