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  50v 8a Datasheet PDF File

For 50v 8a Found Datasheets File :: 2005    Search Time::1.5ms    
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    BU2520AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520AX
OCR Text ...wer Transistor BU2520AX + 50v 100-200R IC TRANSISTOR DIODE ICsat t IB IBend t Horizontal Oscilloscope Vertical 32u...8a 6A 5A 4A 0 1 2 IB / A 3 4 1 0.6 0.1 1 IC / A 10 100 Fig.7. Typical DC curren...
Description Silicon Diffused Power Transistor

File Size 81.12K  /  8 Page

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    BU2520A

NXP Semiconductors
Philips Semiconductors
Part No. BU2520A
OCR Text ...4.0 0.35 s s IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V mi...8a 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 16 kHz BU2520A ts IC = 6A 5A tf 0...
Description Silicon Diffused Power Transistor

File Size 56.16K  /  7 Page

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    BU2525AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AF
OCR Text ...istor BU2525AF ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IBend Vertical 100R 6V ...8a 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 1...
Description Silicon Diffused Power Transistor

File Size 70.77K  /  7 Page

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    BU2525AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AW
OCR Text ...4.0 0.35 s s IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V mi...8a 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525A ts IC = 8a 7A 0...
Description Silicon Diffused Power Transistor

File Size 74.93K  /  7 Page

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    BU2525AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AX
OCR Text ...istor BU2525AX ICsat + 50v 100-200R IC 90 % Horizontal tf 10 % Oscilloscope IB t ts IBend Vertical 100R 6V ...8a 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 1...
Description Silicon Diffused Power Transistor

File Size 72.99K  /  7 Page

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    BU2525A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525A
OCR Text ...4.0 0.35 s s IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V mi...8a 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525A ts IC = 8a 7A 0...
Description Silicon Diffused Power Transistor

File Size 51.22K  /  7 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text ...0 2.5 10 1.0 1 5.0 V = 50v 5s PULSE WIDTH VCE = 25V CC 25V 80s PULSE WIDTH 8.0 6.0 7.0 9.0 VCE , Collector-to-Emitter Voltage...8a 160 100 120 I F = 1 5 0A I F = 75A IF = 38a I IR R M - (A ) VR = 36 0 V TJ = 12 5 C TJ = ...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001

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Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001
OCR Text .... L = 14.9mH, IAS = 2.2A, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 2.8a, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fai...
Description 250v N-Channel MOSFET
250v N-Channel B-FET / Substitute of IRFU214 & IRFU214A
250v N-Channel B-FET / Substitute of IRFR214 & IRFR214A

File Size 644.81K  /  9 Page

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    IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NTRR
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 2.9A 23 ID = 2.9A 3.6 nC VDS = 160V 9.2 VGS = 10V, --- VDD = 100V --- ID = 2.9A ns --- RG = 24 ---...8a RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) T...
Description TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

File Size 130.56K  /  10 Page

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    NTE2923

NTE[NTE Electronics]
Part No. NTE2923
OCR Text ...mum junction temperature. VDD = 50v, starting TJ = +25C, L = 11mH, RG = 25, IAS = 8.8a ISD 8.8a, di/dt 100A/s, VDD 500V, TJ +150C Pules Width 300s, Duty Cycle 2%. Electrical Characteristics: (TJ = +25C unless otherwise specified) ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.63K  /  3 Page

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