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NXP Semiconductors N.V.
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| Part No. |
BT136S-800
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| OCR Text |
...a; di g /dt = 0.2 a/s; t2+ g+ -50a/s i t =6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g- -50a/s i t =6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2...800v; t j = 125 c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v... |
| Description |
4Q Triac
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| File Size |
131.64K /
15 Page |
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it Online |
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Infineon Technologies
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| Part No. |
K25N120
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| OCR Text |
...5c 100c 125c 0a 10a 20a 30a 40a 50a 60a t c , case temperature t c , case temperature figure 3. power dissipation as a function ...800v, v ge = +15v/0v, r g = 22 ? , dynamic test circuit in fig.e ) figure 10. typical switchin... |
| Description |
Fast IGBT in NPT-technology
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| File Size |
392.52K /
13 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
APT25GT120BRDQ2G
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| OCR Text |
... i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c
052-6269 re...800v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on ener... |
| Description |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
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| File Size |
152.15K /
9 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM50TF-28H
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| OCR Text |
...E = 0V IC = 5mA, VCE = 10V IC = 50a, VGE = 15V IC = 50a, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 800v, IC = 50a, VGS = 15V IE = 50a, VGS = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 255 - Max. 1.0 0.5 8.0 4.2**... |
| Description |
122 x 32 pixel format, LED Backlight available 50 A, 1400 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 50 Amperes/1400 Volts
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| File Size |
66.08K /
4 Page |
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it Online |
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Price and Availability
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