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4900 Datasheet PDF File

For 4900 Found Datasheets File :: 44545 Search Time::1.703ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4 BFG520; BFG...900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	4.0 August 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 3000V IF(AV) 1571A IFSM 20000A APPLICAT...900 Conduction 5 800 Effective thermal resistance Junction to case C/W Double side 0.032...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	4.0 DS4181-5.0 August 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 6000V IF(AV) 811A IFSM 10500A ...900 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean ...
Description	Rectifier Diode
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS .................................................900 30 7 21 40 -55 ~ +150 -55 ~ +150 2000 2 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute...
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS .................................................900 30 7 21 40 -55 ~ +150 -55 ~ +150 2000 2 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute...
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low con...900 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Cap...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...- --- --- --- Typ. --- 0.057 4.6 --- --- --- --- --- --- 170 44 62 13 190 130 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.3 m VGS = 10V, ID = 101A 4.0 V...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...- --- --- --- Typ. --- 0.057 4.6 --- --- --- --- --- --- 170 44 62 13 190 130 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.3 m VGS = 10V, ID = 101A 4.0 V...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...--- --- 130 35 39 15 140 62 110 4.5 7.5 5890 1570 130 8000 1370 2380 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to...900 15V TOP 750 ID 52A 91A 130A EAS , Single Pulse Avalanche Energy (mJ) VDS L D...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...e Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temper...900 CISS 600 0.95 COSS 0.85 300 CRSS 0.75 -60 -40 -20 0 20 40 60...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

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