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NXP Semiconductors N.V.
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| Part No. |
ACTT2X-800E
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| OCR Text |
...f rise of on-state current i t =3a; i g = 0.2 a; di g /dt = 0.2 a/s - 100 a/s i gm peak gate current t = 20 s- 2 a p gm peak gate power - ...800v; t j =25c --10a v d =800v; t j = 125 c - - 0.5 ma dv d /dt rate of rise of off-state voltage v... |
| Description |
AC Thyristor Triac power switch
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| File Size |
179.18K /
14 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2384
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| OCR Text |
... Time Fall Time VDS = 25V, ID = 3a VDS = 25V, VGS = 0, f = 1MHz 1.8 - - - - - - - 3.0 3900 200 80 60 90 330 110 - 5000 350 140 90 140 430 140 mho pf pf pf ns ns ns ns VDS = 0, VGS = 20V VDS = VGS, ID = 1mA VGS = 10V, ID = 3a 800 - - - 2.1 -... |
| Description |
MOSFET N-Channel Enhancement Mode, High Speed Switch
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| File Size |
23.94K /
2 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA13N80_F109 FQA13N80 FQA13N80_06 FQA13N8006
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| OCR Text |
..., ID = 250 A VGS = 10 V, ID = 6.3a VDS = 50 V, ID = 6.3a VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
800 -----3.0 ------
Typ
-0...800v N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V... |
| Description |
800v N-Channel MOSFET
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| File Size |
820.08K /
9 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRGPH50FD2
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| OCR Text |
... = 25 A
20
2.0
I C = 1 3a
10
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem pera...800v = 15V = 25C = 25A
100
RG = 5 V GE = 15V V CC = 800v I C = 50A
9.4
I C = 25A
10
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=25A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)
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| File Size |
387.89K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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