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  3.2gb s Datasheet PDF File

For 3.2gb s Found Datasheets File :: 762    Search Time::1.953ms    
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    WEDC[White Electronic Designs Corporation]
Part No. W3H32M72E-400Es W3H32M72E-XsBX W3H32M72E-400EsC W3H32M72E-400EsI W3H32M72E-400EsM W3H32M72E-400sB W3H32M72E-400sBC W3H32M72E-400sBI W3H32M72E-400sBM W3H32M72E-533Es W3H32M72E-533EsC W3H32M72E-533EsI W3H32M72E-533EsM W3H32M72E-533sB W3H32M72E-533sBC W3H32M72E-533sBI W3H32M72E-533sBM W3H32M72E-667Es W3H32M72E-667EsC W3H32M72E-667EsI W3H32M72E-667EsM W3H32M72E-667sB W3H32M72E-667sBC W3H32M72E-667sBI W3H32M72E-667sBM W3H32M72E-Es W3H32M72E-EsC W3H32M72E-EsI W3H32M72E-EsM W3H32M72E-sB W3H32M72E-sBC W3H32M72E-sBI W3H32M72E-sBM
OCR Text ...upply Programmable CAs latency: 3, 4, 5, or 6 Posted CAs additive latency: 0, 1, 2, 3 or 4 Write latency = Read latency - 1* tCK Commercial,...2Gb DDR2 sDRAM is a high-speed CMOs, dynamic random-access memory containing 2,147,483,648 bits. Eac...
Description 32M x 72 DDR2 sDRAM 208 PBGA Multi-Chip Package

File Size 670.95K  /  30 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WV3HG2128M64EEU534D6MG WV3HG2128M64EEU-D6 WV3HG2128M64EEU806D6sG WV3HG2128M64EEU403D6IMG WV3HG2128M64EEU403D6IsG WV3HG2128M64EEU403D6MG WV3HG2128M64EEU403D6sG WV3HG2128M64EEU534D6IMG WV3HG2128M64EEU534D6IsG WV3HG2128M64EEU534D6sG WV3HG2128M64EEU665D6IMG WV3HG2128M64EEU665D6IsG WV3HG2128M64EEU665D6MG WV3HG2128M64EEU665D6sG WV3HG2128M64EEU806D6IMG WV3HG2128M64EEU806D6IsG WV3HG2128M64EEU806D6MG
OCR Text ... VCCQ = 1.8V VCCsPD = +1.7V to +3.6V Differential data strobe (DQs, DQs#) option Four-bit prefetch architecture DLL to align DQ and DQs tran...2GB - 2x128Mx64 DDR2 sDRAM UNBUFFERED WV3HG2128M64EEU-D6 ADVANCED DRAM Die Options: * sAMsUNG...
Description 2GB - 2x128Mx64 DDR2 sDRAM UNBUFFERED

File Size 170.03K  /  11 Page

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    WEDC[White Electronic Designs Corporation]
White Electronic Design...
Part No. WV3HG2128M72AER534D6MG WV3HG2128M72AER534D6sG WV3HG2128M72AER403D6MG WV3HG2128M72AER-D6 WV3HG2128M72AER403D6sG
OCR Text ...CQ = 1.8V 0.1V VCCsPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (ssTL_18-compatible) Differential data strobe (DQs, DQs#) option Four-bit prefe...2GB - 2x128Mx72 DDR2 sDRAM REGIsTERED, w/PLL WV3HG2128M72AER-D6 ADVANCED* Revision History Re...
Description &nbsp;&nbsp;&nbsp;2GB - 2x128Mx72 DDR2 sDRAM REGIsTERED, w/PLL

File Size 149.58K  /  11 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WV3HG2128M72EEU534D6MG WV3HG2128M72EEU806D6sG WV3HG2128M72EEU403D6IMG WV3HG2128M72EEU403D6IsG WV3HG2128M72EEU403D6MG WV3HG2128M72EEU403D6sG WV3HG2128M72EEU534D6IMG WV3HG2128M72EEU534D6IsG WV3HG2128M72EEU534D6sG WV3HG2128M72EEU665D6IMG WV3HG2128M72EEU665D6IsG WV3HG2128M72EEU665D6MG WV3HG2128M72EEU665D6sG WV3HG2128M72EEU806D6IMG WV3HG2128M72EEU806D6IsG WV3HG2128M72EEU806D6MG WV3HG2128M72EEU-D6
OCR Text ... VCCQ = 1.8V VCCsPD = +1.7V to +3.6V Differential data strobe (DQs, DQs#) option Four-bit prefetch architecture DLL to align DQ and DQs tran...2GB - 2x128Mx72 DDR2 sDRAM UNBUFFERED WV3HG2128M72EEU-D6 ADVANCED DRAM Die Options: * sAMsUNG...
Description 2GB - 2x128Mx72 DDR2 sDRAM UNBUFFERED DIMM

File Size 173.39K  /  11 Page

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    KBE00S003M-D411 KBE00S003M

SAMSUNG[Samsung semiconductor]
Part No. KBE00s003M-D411 KBE00s003M
OCR Text ...hanged operating voltage : page 3 <NAND Flash> .... Ver 0.2 - Changed the technical note : page 15,16 <Mobile sDRAM> .... Ver 1.1 - Correcte...2Gb NAND Flash Memory IO0 to IO7 Vdd Vddq Vss Vssq CLK CKE Cs RAs CAs WEd A0~A12 B...
Description 1Gb NAND*2 256Mb Mobile sDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile sDRAMx2

File Size 1,802.34K  /  86 Page

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    M393T2863AZ3-CC M393T2863AZ3-CD5 M393T2863AZA-D5 M393T5663AZA-D5 M393T2863AZ3 M393T2863AZA M393T2863AZA-CC M393T2863AZA-

SAMSUNG[Samsung semiconductor]
Part No. M393T2863AZ3-CC M393T2863AZ3-CD5 M393T2863AZA-D5 M393T5663AZA-D5 M393T2863AZ3 M393T2863AZA M393T2863AZA-CC M393T2863AZA-CE6 M393T5166AZA M393T5166AZA-CC M393T5166AZA-CE6 M393T5166AZA-D5 M393T5168AZ0 M393T5168AZ0-CC M393T5168AZ0-CD5 M393T5660AZ3-CC M393T5660AZ3-CD5 M393T5660AZA-CC M393T5660AZA-CE6 M393T5660AZA-D5 M393T5663AZ3 M393T5663AZ3-CC M393T5663AZ3-CD5 M393T5663AZA M393T5663AZA-CC M393T5663AZA-CE6
OCR Text ................................ 4 3.0 Address Configuration .....................................................................................2GB, 256Mx72 Module (M393T5663AZ3/M393T5663AZA) 7.3 2GB, 256Mx72 Module (M393T5660AZ3/M393T5660AZA) ...
Description DDR2 Registered sDRAM MODULE

File Size 523.27K  /  22 Page

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    ONSEMI[ON Semiconductor]
Part No. NB4N840M07 NB4N840MMNR4G NB4N840M NB4N840MMNG
OCR Text 3.3V 3.2gb/s Dual Differential Clock/Data 2 x 2 Crosspoint switch with CML Output and Internal Termination Description http://onsemi.com MARKING DIAGRAM 1 The NB4N840M is a high-bandwidth fully differential dual 2 x 2 crosspoint swi...
Description 3.3V 3.2gb/s Dual Differential Clock/Data 2 x 2 Crosspoint switch with CML Output and Internal Termination

File Size 96.54K  /  9 Page

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    VSC837 VSC837UG

Vitesse Semiconductor Corporation
Part No. VsC837 VsC837UG
OCR Text ... by 68 Output Crosspoint switch 3.2gb/s NRZ Data Bandwidth 66MHz Multi-Mode Programming Port TTL/2.5V CMOs Control I/O (3.3V tolerant) Programmable On-Chip I/O Termination Input signal Activity (IsA) Monitoring Function Integrated signal Eq...
Description 3.2gb/s 68x68 Crosspoint switch

File Size 339.01K  /  26 Page

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For 3.2gb s Found Datasheets File :: 762    Search Time::1.953ms    
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