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Cypress
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| Part No. |
CY7C1031 CY7C1032 7C1031 CY7C1031-8JCT CY7C1032-10JCT
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| OCR Text |
...031 7C1032 40 39 38 37 36 35 34 2122 23 24 25 26 27 28 29 30 31 32 33 A5 A 4 A 3 A 2 A1 A0 GND V CC A 15 A14 A13 A12 A11
[1]
DP0 DQ7 D...5 280
Cypress Semiconductor Corporation
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3901 North First Street
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San Jose
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| Description |
64K x 18 Synchronous Cache RAM
From old datasheet system
64K x 18 SynchronousCache RAM
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| File Size |
229.64K /
12 Page |
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Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
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| Part No. |
MRF21125S MRF21125 MRF21125SR3
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| OCR Text |
... 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
378.36K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
... 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodula... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
200.55K /
12 Page |
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it Online |
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Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21130HSR3 MRF5S21130HR3
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| OCR Text |
...8 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwid... |
| Description |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
367.74K /
12 Page |
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it Online |
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Infineon
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| Part No. |
SDA9400
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| OCR Text |
...5) 1-4170011 Islamabad (+92) 51-2122 00 Warszawa (+48) 2-670 9151 Taipei (+886) 2-25237990 Seoul 135-080 (+82) 2-527 77 00 Moskva (+7) 095-2...5.2 Mbit embedded DRAM for line and field memories.
ROK DK
RUS E
Tres Cantos-Madrid (+34) 1... |
| Description |
Scanrate Converter
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| File Size |
120.05K /
2 Page |
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it Online |
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Cypress
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| Part No. |
CY7C141 CY7C130 7C130
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| OCR Text |
...C131 40 7C141 39 38 37 36 35 34 2122 23 24 25 26 27 28 29 30 31 32 33 I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R I/O4L I/O5L I/O6L I/O7L NC G...5 6 7 8 9 10 11 12 13 39 38 37 36 35 34 33 32 31 30 29 28 27 OER A0R A1R A2R A3R A4R A5R A6R A7R A8R... |
| Description |
1K x 8 Dual-Port Static RAM
From old datasheet system
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| File Size |
284.28K /
16 Page |
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it Online |
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Motorola
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| Part No. |
MRF5P21240
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| OCR Text |
... 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermo... |
| Description |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
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| File Size |
585.82K /
8 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BLV862
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| OCR Text |
...1.2 k 4.7 k 0805 0805 0805 0805 2122 118 03881 2122 118 04562 2122 118 04598 2122 118 04579 2222 852 47153
R2, R3, R4, R5, R8 SMD resisto...5 mm.
1999 Jun 25
8
Philips Semiconductors
Product specification
UHF linear push-pull... |
| Description |
UHF linear push-pull power transistor
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| File Size |
88.67K /
12 Page |
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it Online |
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Price and Availability
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