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  20v- Datasheet PDF File

For 20v- Found Datasheets File :: 43521    Search Time::1.344ms    
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    AP92T03GH-HF14 AP92T03GH-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP92T03GH-HF14 AP92T03GH-HF-14
OCR Text ...ss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 45 72 nc q gs gate-source charge v ds =20v - 6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 26 - nc t d(on) turn-on delay time 2 v ds =15v ...
Description Simple Drive Requirement

File Size 125.79K  /  4 Page

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    PCHMB600E6C

Nihon Inter Electronics Corporation
Part No. PCHMB600E6C
OCR Text ...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 600a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 600ma . . ...
Description IGBT Module-Chopper

File Size 283.40K  /  4 Page

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    AON6884

Alpha & Omega Semiconductors
Part No. AON6884
OCR Text ...-off delaytime v gs =10v, v ds =20v, r l =2 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =20v, i d =10a gate source charge gate drain charge total gate charge m w i s =1a,v g...
Description 40V Dual N-Channel MOSFET

File Size 245.18K  /  6 Page

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    TY Semiconductor Co., Ltd
Part No. AOK20B135D1
OCR Text ...ge =0v, v ce =25v, f=1mhz v ce =20v, i c =20a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =20a v v ce =1350v, v ge =0v v ge =0v, i c =20a v turn-off delay time t j =25c v ge =15v, v ce ...
Description Latest AlphaIGBT (a IGBT) technology

File Size 911.74K  /  8 Page

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Part No. 2SK3747
OCR Text ...ansfer admittance ? yfs ? v ds =20v, i d =1a 0.7 1.4 s static drain-to-source on-state resistance r ds (on) i d =1a, v gs =10v 10 13 w marking : k3747 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo...
Description 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 37.00K  /  4 Page

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