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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF19085R3 MRF19085 MRF19085LR3 MRF19085SR3 MRF19085LSR3
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| OCR Text |
...= 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 3rd Order Intermo... |
| Description |
RF Power Field Effect Transistors
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| File Size |
581.22K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MW5IC2030GNBR1
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| OCR Text |
...ching that makes it usable from 1930 to 1990 mhz. this multi - stage structure is rated for 26 to 28 volt operation and covers all typical cellular base station modulation formats. final application ? typical cdma performance: v dd = 2... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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| File Size |
479.83K /
16 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MRF19085
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| OCR Text |
...18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12 13 db drain efficiency (v dd = 26 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990... |
| Description |
MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
332.28K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF18090BSR3
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| OCR Text |
... = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) 40 45 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
385.00K /
8 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S19090L
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| OCR Text |
...= 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Third Order Inter... |
| Description |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
437.91K /
12 Page |
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it Online |
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RF Monolithics
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| Part No. |
SF2001E
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| OCR Text |
...60 mhz passband insertion loss, 1930 -1990 mhz il 2.35 4.0 db amplitude ripple, 1930 -1990 mhz 1.4 2.4 db p-p attenuation referenced to 0 db dc to1850 mhz 20.0 32.0 db 1850 to 1910 mhz 10.0 21.0 db 2010 to 2040 mhz 4.5 10.0 db ... |
| Description |
SAW Filter
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| File Size |
705.96K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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