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  18-36 Datasheet PDF File

For 18-36 Found Datasheets File :: 478891    Search Time::10.906ms    
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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ....90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum ...8 -1.2 IC VBE -10 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC / I B ...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...ote) Tj Tstg Rating -20 -10 -7 -1.5 -2.5 -150 500 750 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA 2-3S1A Weight: 0....8 -6 -4 IB = -2 mA DC current gain -55 100 -0.8 -0.4 10 -0.001 0 0 -0.2 -0.4 ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...ating -20 -20 -7 -3.0 -5.0 -300 1.0 2.5 150 -55 to 150 Unit V V V A mA JEDEC W C C SC-62 2-5K1A JEITA TOSHIBA Weight: 0.05 g (...8 -1.2 -1.6 -2.0 -2.4 10 Collector-emitter voltage VCE (V) 1 -0.001 -0.01 -0.1 ...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-of...8 -1.2 -1.6 -2 10 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 Collector-emitte...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4...8 Switching Time Test Circuit PW=20s D.C.1% 2.0 IB1 OUTPUT IB2 VR 50 RB + 100F + 470F VCC=...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ....90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum ...8 -1.0 -1.2 - 0.001 - 0.1 -1 -10 Ambient temperature Ta (C) Base to emitter voltag...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...tion eith radial taping 2.50.1 Features 13.00.2 1.20.1 1.480.2 90 Power supply for audio & visual equipments such as TVs ...8 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V A A mA Note) 1. Measuring methods are base...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -150 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C JEDEC JEITA TOSH...8 -0.8 -6 -4 -0.4 IB = -2 mA hFE - IC Ta = 100C (A) -1.2 hFE 100 25 Collector cur...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (t...8 60 280 70 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V 1 2004-07-07 2SA2070...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text 1) High speed switching. (Tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -2A, IB = -0.2A) 3) Stro...8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 1000 COLLECTOR OU...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

File Size 42.30K  /  4 Page

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