...o 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Transistors
PC -- Ta
40 -6 TC=25C (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W)
2SB931
IC -- VCE
Collector to ...
Description
Silicon PNP epitaxial planar type(For power switching)
...o 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Transistors
PC -- Ta
40
2SB932
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-6 TC=25C IB=-100mA -90mA -80mA -70mA -60mA -50mA...
Description
Silicon PNP epitaxial planar type(For power switching)
...o 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Transistors
PC -- Ta
50 -8 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) -7 IB=-120mA TC=25C
2SB933
IC -- VCE
...
Description
Silicon PNP epitaxial planar type(For power switching)
...o 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Transistors
PC -- Ta
50 -2.0 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C IB=-120mA -110mA -100mA -90mA -80...
...ature Storage temperature
V
14.70.5 4.40.5 0 to 0.4
V A A W
10.00.3
1.5-0.4
4.40.5
2.0
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
5.080.5
C C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current E...
...ature Storage temperature
V
14.70.5 4.40.5 0 to 0.4
V A A W
10.00.3
1.5-0.4
4.40.5
2.0
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
5.080.5
C C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current E...
...000 -2.8 -2.5 20 0.4 1.5 0.5
14.70.5
+0.4
+0
Unit mA
mA mA V
Forward current transfer ratio Base to emitter voltage Collec...3) Without heat sink (PC=1.3W) TC=25C IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA - 0.6mA -...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...0000 -2.5 -2 -4 15 0.3 2 0.5
14.70.5
+0.4
+0
Unit A A mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
V V...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...nection
B
Rank hFE1
E
14.70.5
+0.4
+0
1
Power Transistors
PC -- Ta
50 -8 (1) 40 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C -7 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -...
... 1 2 3 4.20.2
q q
16.70.3 14.00.5
q
High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw
s
Absolute Maximum Ratings (TC=25C)
...
Description
Silicon PNP epitaxial planar type(For power amplification)