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SamHop Microelectronics...
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| Part No. |
STM121N
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| OCR Text |
...rent-continuous -pulsed b a ver 1.1 www.samhop.com.tw jul,25,2012 1 details are subject to change without notice. t a =25 c w p d c -55 to ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =1... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
100.91K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STM122N
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| OCR Text |
...rent-continuous -pulsed b a ver 1.0 www.samhop.com.tw dec,27,2011 1 details are subject to change without notice. t a =25 c w p d c -55 to ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
101.77K /
7 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT08L01
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| OCR Text |
...rent-continuous -pulsed b a ver 1.2 www.samhop.com.tw jul,27,2011 1 details are subject to change without notice. w p d c -55 to 150 t a =25...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
116.00K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STS6N20
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| OCR Text |
...i d r ds(on) ( ) @ vgs=4.5v 1.05 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount p...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
87.48K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STU25L01
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| OCR Text |
...rent-continuous -pulsed a a ver 1.0 www.samhop.com.tw apr,18,2012 1 details are subject to change without notice. t c =25 c g g s s s t u s...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
89.30K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
SP3906
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| OCR Text |
...mperature range t j , t stg ver 1.0 www.samhop.com.tw sep,11,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t ...6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
104.05K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STD303S
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| OCR Text |
...175 c thermal characteristics a 1 n 2007 s amhop microelectronics c orp. product summary v ds s i d r ds (on) ( m ) max -24a 28 @ v gs =-10v...6ohm ns ns ns ns totalgatecharge(10v) g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-1... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
99.22K /
8 Page |
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it Online |
Download Datasheet |
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