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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF2045
OCR Text	...r applications (PCN/PCS) in the 1.8 to 2.2 GHz frequency range. 3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor en...
Description	UHF power LDMOS transistor
File Size	131.69K / 11 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries]
Part No.	DC16-73
OCR Text	...SWR Coupling Coupled Port VSWR 1. Coupling loss included. Min. 1.42 Typ. .25 Max. 1.66 .35 1.3:1 1.3:1 16.6 1.3:1 Unit GHz dB d...2 GND RF IN 3 5 2 3 5 4 4 1 Directional Coupler DC16-73 Typical Performance ...
Description	Directional Coupler
File Size	59.62K / 3 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC318MS8G
OCR Text	...ut Return Loss Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (OIP3) Supply Current (Idd) 6 7 -1 10 11 6 Min. Typ. 5.0 - 6.0 9 0.03 18 2.5 12 13 2 13 6 10 12 0.04 23 4.0 Max. Units GHz dB dB/C dB dB dB dB dBm dBm mA ...
Description	GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
File Size	210.10K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC5216 C5216A
OCR Text	...) 2.4 3.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 V V mm2 16 2.2 2.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 Typical V V mm2 Max. 43 20 Unit GHz dB dBm Min. 37 20 Typical Max. 40 Unit GHz dB dBm PHOTOGRAPH Min. 40 ( ):Design Target (Now Evaluating...
Description	Q-Band 4-Stage Driver Amplifier From old datasheet system
File Size	29.81K / 4 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-9970
OCR Text	....0 dB Typical Open Loop Gain at 1.0 GHz * 14.5 dBm Typical P1 dB at 1.0 GHz * Hermetic Gold-ceramic Microstrip Package Description The M...2 Vd = 7.8 V 4 3 MSA C block OUT 6-489 5965-9668E MSA-9970 Absolute Maximum Ratings Pa...
Description	Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大
File Size	44.98K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE68100 NE68119-T1 NE681 NE68130-T1 NE68133-T1B NE68135
OCR Text	1.2 dB at 1 GHz 1.6 dB at 2 GHz NE681 SERIES * HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz * LOW COST s ber m TE: art nu e not O . ar E N ing p ign t s EA S l o w hee ew de r PL ta s r n ol DESCRIPTION da ef e fo o Th this ...
Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	215.81K / 20 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text	... PO GP 65 25 9.2 45 6 - Max 1.5 1.25 3:1 1.5:1 Units V mA C/W W dB % dB IC=10mA VCE=40V Test Conditions VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz...
Description	RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
File Size	97.49K / 2 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
Part No.	NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text	1 GHz, 200s Pulse, 10% Duty Features * * * * * * Input and Output matched to 50 RC bias circuit included Dual NPN Silicon class C power tr...2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz VCC = 38V, POUT = 190W, f = 2.7, 2.9...
Description	Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
File Size	52.66K / 2 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF2045 RF2045PCBA
OCR Text	...ar size plastic packages. 45 + 1 4 0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 0.070 sq. NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 0.200 sq. Typ Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS ...
Description	GENERAL PURPOSE AMPLIFIER
File Size	66.49K / 6 Page	View it Online	Download Datasheet

				LINEAR[Linear Integrated Systems]
Part No.	SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text	...analog switches are as follows: 1. Video and RF switching (high speed, high offisolation, low crosstalk): -Multiple video distribution networks -Sampling scanners for RF systems 2. Audio routing (glitch- and noise-free): -High-speed switchi...
Description	Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
File Size	353.61K / 11 Page	View it Online	Download Datasheet

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