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SA1638BE Z3SMC13 ICM72 1A221M UIC809 SM2001 STM32F BD136
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For vated Found Datasheets File :: 282    Search Time::24.078ms    
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    http://
Atmel, Corp.
Atmel Corp.
Part No. AT88SC0404C-SU AT88SC0404C-MP AT88SC0404C-PU AT88SC0404C-PI AT88SC0404C-Y4U AT88SC0404C-SI AT88SC0404C-Y4I AT88SC0404C-WI
OCR Text ...p. authentication mode is acti- vated by a successful authentication sequence. encryption mode is activated by a successful encryption activation following a successful authentication. note: 1. configuration data include viewable areas of...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:25; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle SPECIALTY MEMORY CIRCUIT, PDSO8
PT02A SERIES (MS3112) GENERAL DUTY BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 20 SHELL SIZE, 20-16 INSERT ARRANGEMENT, RECEPTACLE GENDER, 16 CONTACTS CryptoMemory 4千位
CryptoMemory 4 Kbit
Circular Connector; Body Material:Aluminum; Series:PT02; No. of Contacts:5; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:18-5

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    Silicon Storage Technology,...
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Part No. SST32HF201-70-4C-L3K SST32HF201-90-4C-L3K SST32HF201-70-4E-L3K SST32HF201-90-4E-L3K SST32HF402 SST32HF401 SST32HF202 SST32HF201
OCR Text ... is low the flash bank is acti- vated for read, program or erase operation. bes# and bef# cannot be at low level at the same time. if bes# and bef# are both asserted to low level bus contention will result and the device may suffer permanen...
Description Multi-Purpose Flash (MPF) SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA48
RAM, 512K X 8 STATIC 3.3V 10NS 44TSOP
3.3V RoboClock® Low Voltage Programmable Skew Clock Buffer
IC ICD2053B 8 PIN SOIC

File Size 313.86K  /  26 Page

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    Microchip Technology, Inc.
Part No. SST32HF202-70-4C-L3K SST32HF202-90-4C-L3K SST32HF202-70-4E-L3K SST32HF202-90-4E-L3K SST32HF402-70-4E-L3K SST32HF402-70-4C-L3K SST32HF402-90-4C-L3K SST32HF402-90-4E-L3K
OCR Text ... is low the flash bank is acti- vated for read, program or erase operation. bes# and bef# cannot be at low level at the same time. if bes# and bef# are both asserted to low level bus contention will result and the device may suffer permanen...
Description RAW120-02378-0001
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
2K x 8 Dual-Port Static RAM
Low-Cost 3.3V Zero Delay Buffer
MIXED MEMORY|SRAM EEPROM|CMOS|BGA|48PIN|PLASTIC 混合存储器|静态存储器EEPROM中|的CMOS | BGA封装| 48PIN |塑料

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST34HF1641A-70-4C-LS SST34HF1681-70-4E-LS SST34HF1641A-70-4E-LS SST34HF1681-70-4E-LSE SST34HF1681-70-4E-L1PE SST34HF1681-70-4C-LS SST34HF1641A-70-4E-L1P SST34HF1681-70-4C-LSE SST34HF1621A-70-4C-LFP SST34HF1621A-70-4C-LFPE SST34HF1621A-70-4E-LFP SST34HF1641A-70-4E-LSE SST34HF1641A-70-4C-L1PE SST34HF1641A-70-4E-L1PE SST34HF1621A-70-4E-LFPE SST34HF1641A-70-4C-LSE SST34HF1681-70-4C-L1PE
OCR Text ... bes2 is high the sram is acti- vated for read and write operation. bef# and bes1# can- not be at low level, and bes2 cannot be at high level at the same time. if all bank enable signals are asserted, bus contention will result and the dev...
Description SPECIALTY MEMORY CIRCUIT, PBGA56

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    Littelfuse, Inc.
Part No. 235006P 235016P 235025P 235700P 235004P
OCR Text ...relative humidity (95%) and ele vated temperature (40) for 240 hours. salt spra y: mil-std-202f method 101d , test condition b physical specifica tions: material: body: glass cap: nic k el plated br ass leads: tin plated copper terminal ...
Description 5 x 20 mm Fast-Acting Fuse 5 × 20毫米快速保险丝

File Size 180.09K  /  2 Page

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    AT-42010

Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
Part No. AT-42010
OCR Text ...cess. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this...
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片(高 GHz的中等功率硅双极型晶体管

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    AT-42085

Agilent(Hewlett-Packard)
Part No. AT-42085
OCR Text ...cess. the die is nitride passi- vated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this...
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体

File Size 40.45K  /  6 Page

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    Silicon Storage Technology, Inc.
Part No. SST34HF324G-70-4E-L3KE
OCR Text ...n bes# is low the sram is acti- vated for read and write operation. bef# and bes# can- not be at low level at the same time. if all bank enable signals are asserted, bus contention will result and the device may suffer permanent damage. a...
Description 32 Mbit Dual-Bank Flash 4 Mbit SRAM ComboMemory

File Size 484.05K  /  30 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R271669F
OCR Text ... ing adjacent banks to be acti- vated. rd command: the rd (read) command causes one of the 64 dualocts of one of the sense amps to be transmitted on the dqa/dqb pins of the channel. wr command: the wr (write) command causes a dualoct r...
Description 128Mbit RDRAM(F-die)

File Size 293.32K  /  20 Page

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