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  tmos switching Datasheet PDF File

For tmos switching Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
Description tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D
Description tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system

File Size 251.59K  /  8 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
Description tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTD6N10E ON2512 MTD6N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N10E ON2512 MTD6N10E-D
Description tmos E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system

File Size 211.15K  /  10 Page

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    MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D
Description tmos E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system

File Size 279.78K  /  10 Page

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    MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D

ON Semiconductor
ETC
Motorola, Inc
Part No. MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D
Description tmos E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system

File Size 264.45K  /  10 Page

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
Description tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM tmos是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

File Size 155.71K  /  8 Page

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    MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D
Description tmos E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system

File Size 273.51K  /  10 Page

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    MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D
Description tmos E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system

File Size 321.60K  /  12 Page

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    MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422
Description From old datasheet system
tmos POWER FET 3.0 AMPERES 600 VOLTS
tmos E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 71.75K  /  4 Page

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For tmos switching Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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